Print Email Facebook Twitter Solid-phase crystallization of ultra high growth rate amorphous silicon films Title Solid-phase crystallization of ultra high growth rate amorphous silicon films Author Sharma, K. Ponomarev, M.V. Verheijen, M.A. Kunz, O. Tichelaar, F.D. Van de Sanden, M.C.M. Creatore, M. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2012-05-18 Abstract In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. Subject crystallisationelemental semiconductorsgrain sizeplasma materials processingsilicon To reference this document use: http://resolver.tudelft.nl/uuid:a420a326-a751-4815-8144-136911eb5fda DOI https://doi.org/10.1063/1.4717951 Publisher American Institute of Physics ISSN 0021-8979 Source http://jap.aip.org/resource/1/japiau/v111/i10/p103510_s1 Source Journal of Applied Physics, 111 (10), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 The Author(s)American Institute of Physics Files PDF Tichelaar_2012.pdf 906.23 KB Close viewer /islandora/object/uuid:a420a326-a751-4815-8144-136911eb5fda/datastream/OBJ/view