DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology
Doctoral Thesis
(2011)
Author(s)
C Biasotto (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
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https://resolver.tudelft.nl/uuid:009dbe56-2f04-4592-83e3-e2355d059d5c
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Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
ISBN (print)
978-90-8570-425-6
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