A compact 245--310 GHz Balun in 130-nm SiGe BiCMOS technology

Conference Paper (2025)
Author(s)

Aniello Franzese (IHP–Leibniz-Institut für innovative Mikroelektronik)

Batuhan Sutbas (IHP–Leibniz-Institut für innovative Mikroelektronik)

Volkan Erturk (IHP–Leibniz-Institut für innovative Mikroelektronik)

Thomas Mausolf (IHP–Leibniz-Institut für innovative Mikroelektronik)

David Bierbüsse (RWTH Aachen University)

Renato Negra (RWTH Aachen University)

Ehsan Shokrolahzade (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Marco Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Corrado Carta (IHP–Leibniz-Institut für innovative Mikroelektronik)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/SiRF63957.2025.11076759 Final published version
More Info
expand_more
Publication Year
2025
Language
English
Research Group
Electronics
Pages (from-to)
61-63
ISBN (electronic)
9798331507305
Event
24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2026-07-31 - 2026-08-02), Stockton-on-Tees, United Kingdom

Abstract

This paper presents a sub-terahertz (sub-THz) balun that leverages stacked-coupled transmission lines (TLs) and a modified Marchand configuration with a reduced electrical length. By rolling up the differential ends as in a transformer-based design, it is demonstrated that the open end of the single-ended winding can be connected to the centre tap. This enables both compact size and the reduction of the parasitic inductance given by the via-to-ground connection. The insertion loss (IL) is only 1.3 dB at 290 GHz, and the design achieves a compact form factor of 0.01mm2 of silicon area, making the proposed balun a suitable interface for differential-to-single-ended circuits in the sub-THz frequencies for 6G applications.