A compact 245--310 GHz Balun in 130-nm SiGe BiCMOS technology
Aniello Franzese (IHP–Leibniz-Institut für innovative Mikroelektronik)
Batuhan Sutbas (IHP–Leibniz-Institut für innovative Mikroelektronik)
Volkan Erturk (IHP–Leibniz-Institut für innovative Mikroelektronik)
Thomas Mausolf (IHP–Leibniz-Institut für innovative Mikroelektronik)
David Bierbüsse (RWTH Aachen University)
Renato Negra (RWTH Aachen University)
Ehsan Shokrolahzade (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Marco Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Corrado Carta (IHP–Leibniz-Institut für innovative Mikroelektronik)
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Abstract
This paper presents a sub-terahertz (sub-THz) balun that leverages stacked-coupled transmission lines (TLs) and a modified Marchand configuration with a reduced electrical length. By rolling up the differential ends as in a transformer-based design, it is demonstrated that the open end of the single-ended winding can be connected to the centre tap. This enables both compact size and the reduction of the parasitic inductance given by the via-to-ground connection. The insertion loss (IL) is only 1.3 dB at 290 GHz, and the design achieves a compact form factor of 0.01mm2 of silicon area, making the proposed balun a suitable interface for differential-to-single-ended circuits in the sub-THz frequencies for 6G applications.