Thermal models for semiconductors

Conference paper (2010)

Authors

PJ van Duijsen External organisation
P. Bauer Electrical Power Processing
J Leuchter Old - EWI Sect. Electrical Power Processing
Research Group
Electrical Power Processing
More Info
expand_more

Published Date

2010

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

Electrical Power Processing

Abstract

The power electronics circuits are seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. The overview of power semiconductors switches as an effects of temperature are shown in this paper. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for the semiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for all semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations.