High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors
Journal Article
(2009)
Author(s)
AS Molinari (TU Delft - QN/Mol. Electronics & Devices)
H Alves (External organisation)
Zhuoyao Chen (External organisation)
A Facchetti (External organisation)
AF Morpurgo (TU Delft - QN/Mol. Electronics & Devices)
Research Group
QN/Mol. Electronics & Devices
To reference this document use:
https://resolver.tudelft.nl/uuid:0603a89e-8217-4f6d-8da3-99ad058202ff
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Publication Year
2009
Research Group
QN/Mol. Electronics & Devices
Volume number
131
Pages (from-to)
2462-2463
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