A 21-26GHz SiGe bipolar power amplifier MMIC

Journal article (2005)

Authors

TS Cheung Electronics -

J..R.. Long Electronics -

Research Group

Electronics () (TU Delft)

Elektrotechniek Techniek

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http://resolver.tudelft.nl/uuid:079c6574-b212-4e8d-bdb0-e211086f5844

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Published Date

2005

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.