Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing
Conference Paper
(2010)
Author(s)
G Lorito (TU Delft - Electronic Components, Technology and Materials)
L Qi (External organisation)
L. K. Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ICSICT.2010.5667505
To reference this document use:
https://resolver.tudelft.nl/uuid:0802d431-dc8a-41f0-bc11-97ca44a582be
More Info
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Publication Year
2010
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
972-974
ISBN (print)
978-1-4244-5797-7
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