High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates
Conference Paper
(2006)
Author(s)
H Sagkol (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
B. Rejaei Salmassi (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
JN Burghartz (TU Delft - Old - EWI Ch. Integrated Sensing Devices)
Research Group
Old - EWI Ch. Integrated Sensing Devices
To reference this document use:
https://resolver.tudelft.nl/uuid:08ec2e78-449d-4100-85c6-fab29ce21e91
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Publication Year
2006
Research Group
Old - EWI Ch. Integrated Sensing Devices
Pages (from-to)
245-247
ISBN (print)
0-7803-9742-0
Abstract
An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively.
Keywords: Passive devices, Micromachining, RFIC, Inductors.
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