Superconducting nanowire single photon detectors based on NbRe nitride ultrathin films
F. Avitabile (University of Salerno)
F.C. Colangelo (TU Delft - ImPhys/Esmaeil Zadeh group, University of Salerno)
M. Yu Mikhailov (Student TU Delft)
Z. Makhdoumi Kakhaki (University of Salerno)
A Kumar (University of Salerno)
I.Z. Esmaeil Zadeh (TU Delft - ImPhys/Esmaeil Zadeh group)
C. Attanasio (University of Salerno)
C. Cirillo (University of Salerno)
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Abstract
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of T c for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T = 3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.