Photonic ultrasound sensors promise unparalleled spatial and temporal resolution in ultrasound imaging due to their size-independent noise figure, high sensitivity, and broad bandwidth. Optical materials can further improve performance and stability, but achieving small size, high sensitivity, and wide bandwidth remains challenging. This work introduces amorphous silicon carbide (a-SiC) for ultrasound sensing, offering strong optical confinement, low propagation loss, and high stability for miniaturized microring sensors. We demonstrate a compact detection system with a 20-transducers linear array coupled to a single bus waveguide. The sensors achieve an optical finesse of 1320 and intrinsic sensitivity of 78 fm kPa⁻¹, leading to a noise-equivalent pressure below 55mPa/Hz, calibrated from 3.36 MHz to 30 MHz. High-resolution imaging of fine structures validates real-world applicability. a-SiC is also easily integrated on most substrates due to its low deposition temperature. Our results position a-SiC as a promising solution for optical ultrasound sensing, combining miniaturization, low-loss, and high-sensitivity.

Superconducting nanowire single-photon detectors (SNSPDs) have emerged as essential devices that push the boundaries of photon detection with unprecedented sensitivity, ultrahigh timing precision, and broad spectral response. Recent advancements in materials engineering, superconducting electronics integration, and cryogenic system design are enabling the evolution of SNSPDs from single-pixel detectors toward scalable arrays and large-format single-photon time tagging cameras. This perspective article surveys the rapidly evolving technological landscape underpinning this transition, focusing on innovative superconducting materials, advanced multiplexed read-out schemes, and emerging cryo-compatible electronics. We highlight how these developments are set to profoundly impact diverse applications, including quantum communication networks, deep-tissue biomedical imaging, single-molecule spectroscopy, remote sensing with unprecedented resolution, and the detection of elusive dark matter signals. By critically discussing both current challenges and promising solutions, we aim to articulate a clear, coherent vision for the next generation of SNSPD-based quantum imaging systems.

The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, T_c. The thickness dependence of T c for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T = 3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.

Due to stringent thermal budgets in cryogenic technologies such as superconducting quantum computers and sensors, electronic building blocks that simultaneously offer low energy consumption, fast switching, low error rates, a small footprint, and simple fabrication are pivotal for large-scale devices. Here, we demonstrate a superconducting switch with attojoule switching energy, high speed (pico-second rise/fall times), and high integration density (on the order of 10 ^-2 μm ² per switch). It consists of a superconducting nanochannel and a metal heater separated by an insulating silica layer. We experimentally demonstrate digital gate operations utilizing these nanostructures, such as NOT, NAND, NOR, AND, and OR gates, with a few femtojoules of energy consumption and ultralow bit error rates <10 ^-8. In addition, we build energy-efficient volatile memory elements with nanosecond operation speeds and a retention time over 10 ⁵ s. These superconducting switches open new possibilities for increasing the size and complexity of modern cryogenic technologies.

Superconducting Nanowire Single Photon Detectors (SNSPDs) are a leading technology for quantum optics and information, offering fast recovery, low timing jitter, high detection efficiency, and intrinsic photon number resolution, making them ideal for future quantum applications [1]. We introduce a Monte-Carlo-Markov-Chain (MCMC) approach to Detector Tomography for nanobridge NbTiN devices, separating internal and external quantum efficiencies. This is key to understanding SNSPD detection mechanisms and performance trade-offs.

We demonstrate laser-induced relaxation oscillations in superconducting nanowire single-photon detectors (SNSPDs). These oscillations appear when a voltage-biased NbTiN nanobridge detector is illuminated with intense pulsed-laser light at a repetition rate of approximately 19MHz. They differ from the well-known relaxation oscillations by a stepwise increase in frequency and phase locking of the oscillations to the laser pulses. We create a model that incorporates electrical feedback and excludes thermal effects to simulate and explain the origin of the observed laser-induced relaxation oscillations. Qualitative agreement to the experiment is achieved using realistic values for the parameters in the model.

Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrially well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine the a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of ( 0.28^+0.44_−0.28) dB and integration density increment exceeding 4444-fold. By implementing active devices on the a-SiC, we achieve 27 times higher thermo-optic tuning efficiency, with respect to the SiN photonic platform. In addition, the a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip coupling strategy depending on the interfacing platform, with efficient side-coupling on SiN and grating-coupling on the a-SiC platform. The proposed a-SiC/SiN photonic platform can foster versatile applications in programmable and quantum photonics, nonlinear optics, and beyond.

In the past decade, lithium niobate (LiNbO₃ or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities, and low-loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide-semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here, we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition at low temperatures (<165 °C), can be conveniently integrated with LiNbO₃ and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO₃ intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 1.06 × 10⁵ and a resonance electro-optic tunability of 3.4 pm/V with a 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with a 40 μm radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for the implementation of future fast electro-optic modulators and reconfigurable photonic circuits, as well as nonlinear processes that can benefit from involving both second- and third-order nonlinearities.

Laser satellite communications is a growing market for telecommunications services and secure communications. Due to the small footprint of the beam, it provides security, and it can serve as inherently safe communication, using the quantum properties of light, i.e. quantum communications, and quantum key distribution. For quantum communications, the detector sensitivity is of utmost importance. Hence, detector technologies such as Superconducting Nanowire Single Photon Detector (SNSPD), are designated to support optical communications. In this research, we estimate the efficacy of SNSPD arrays for optical downlinks to earth. In this paper, we investigate how spatial resolution of the SNSPD and the spatiotemporal statistics of the incoming turbulence can be matched, in order to effectively use SNSPD arrays. We simulated the downlink using a split-step approach, using a receiver aperture of 1 m and a Fried parameter of 50 and 12.5 cm (D/r₀ is 2 and 8). We obtained the average intensity, the scintillation index, the probability density function (PDF) and the power spectral density (PSD) using 4000 samples. We project instantaneous images on the SNSPD, to estimate how the PSD is distributed. We conclude that stronger turbulence conditions could improve detection performance, because the point spread function (PSD) is wider, and the incident light is distributed over more pixels.

Photonic integrated circuits (PICs) are enabling breakthroughs in several areas, including quantum computing, neuromorphic processors, wearable devices, and more. Nevertheless, existing PIC measurement methods lack the spectral precision, speed, and sensitivity required for refining current applications and exploring new frontiers such as point-of-care or wearable biosensors. Here, the “sweeping optical frequency mixing method (SOHO)” is presented, surpassing traditional PIC measurement methods with real-time operation, 30 dB higher sensitivity, and over 100 times better spectral resolution. Leveraging the frequency mixing process with a sweeping laser, SOHO excels in simplicity, eliminating the need for advanced optical components and additional calibration procedures. Its superior performance is demonstrated on ultrahigh-quality factor (Q) fiber-loop resonators (Q = 46 × 10⁶), as well as microresonators, realized on a new optical waveguide platform. An experimental spectral resolution of 19.1 femtometers is demonstrated using an 85-meter-long unbalanced fiber Mach Zehnder Interferometer, constrained by noise resulting from the extended fiber length, while the theoretical resolution is calculated to be 6.2 femtometers, limited by the linewidth of the reference laser. With its excellent performance metrics, SOHO has the potential to become a vital measurement tool in photonics, excelling in high-speed and high-resolution measurements of weak optical signals.

Measuring superconducting materials near absolute zero Kelvin poses challenges due to low output voltage. This study presents a cryogenic amplifier for ultra-low temperatures, fabricable on the same chip as the material, replacing noisy room temperature setups.

Achieving high degree of tunability in photonic devices has been a focal point in the field of integrated photonics for several decades, enabling a wide range of applications from telecommunication and biochemical sensing to fundamental quantum photonic experiments. We introduce a novel technique to engineer the thermal response of photonic devices resulting in large and deterministic wavelength shifts across various photonic platforms, such as amorphous Silicon Carbide (a-SiC), Silicon Nitride (SiN) and Silicon-On-Insulator (SOI). In this paper, we demonstrate bi-directional thermal tuning of photonic devices fabricated on a single chip. Our method can be used to design high-sensitivity photonic temperature sensors, low-power Mach-Zehnder interferometers and more complex photonics circuits.

Since their first demonstration in 2001 [Gol’tsman et al., Appl. Phys. Lett. 79, 705-707 (2001)], superconducting-nanowire single-photon detectors (SNSPDs) have witnessed two decades of great developments. SNSPDs are the detector of choice in most modern quantum optics experiments and are slowly finding their way into other photon-starved fields of optics. Until now, however, in nearly all experiments, SNSPDs were used as “binary” detectors, meaning that they could only distinguish between 0 and > = 1 photons, and photon number information was lost. Recent research has demonstrated proof-of-principle photon-number resolution (PNR) SNSPDs counting 2-5 photons. The photon-number-resolving capability is highly demanded in various quantum-optics experiments, including Hong-Ou-Mandel interference, photonic quantum computing, quantum communication, and non-Gaussian quantum state preparation. In particular, PNR detectors at the wavelength range of 850-950 nm are of great interest due to the availability of high-quality semiconductor quantum dots (QDs) [Heindel et al., Adv. Opt. Photonics 15, 613-738 (2023)] and high-performance cesium-based quantum memories [Ma et al., J. Opt. 19, 043001 (2017)]. In this paper, we demonstrate NbTiN-based SNSPDs with >94% system detection efficiency, sub-11 ps timing jitter for one photon, and sub-7 ps for 2 photons. More importantly, our detectors resolve up to 7 photons using conventional cryogenic electric readout circuitry. Through theoretical analysis, we show that the PNR performance of demonstrated detectors can be further improved by enhancing the signal-to-noise ratio and bandwidth of our readout circuitry. Our results are promising for the future of optical quantum computing and quantum communication.

We present the first observations of laser synchronised relaxation oscillations in superconducting nanowire single photon detectors. Understanding the thermal feedback behind these oscillations aids the development of photon number resolving and higher count rate detectors.