The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Journal article (2020)

Authors

R. Sokolovskij Electronic Components, Technology and Materials - EEMCS , Southern University of Science and Technology
Jian Zhang Fudan University
Hongze Zheng Shenzhen Institute of Wide-bandgap Semiconductors, Ministry of Education, Shenzhen, GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology
Wenmao Li Ministry of Education, Shenzhen, Shenzhen Institute of Wide-bandgap Semiconductors, Southern University of Science and Technology, GaN Device Engineering Technology Research Center of Guangdong
Yang Jiang Southern University of Science and Technology, Shenzhen Institute of Wide-bandgap Semiconductors, GaN Device Engineering Technology Research Center of Guangdong, Ministry of Education, Shenzhen
Gaiying Yang Southern University of Science and Technology
Hongyu Yu Southern University of Science and Technology, Shenzhen Institute of Wide-bandgap Semiconductors, GaN Device Engineering Technology Research Center of Guangdong, Ministry of Education, Shenzhen
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2020 R. Sokolovskij, Jian Zhang, Hongze Zheng, Wenmao Li, Yang Jiang, Gaiying Yang, Hongyu Yu, Pasqualina M Sarro, Kouchi Zhang
DOI
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https://doi.org/10.1109/JSEN.2020.2987061
Platinum HEMT Gate recess ALGaN/GaN Cyclic etching Enhancement mode H2 sensor
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Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high temperature. With increasing recess depth, the threshold voltage ( VTH ) shifted from -1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation ( Δ IDS ), while a deep recess (15 nm) resulted in the highest sensing response ( S ) of 145.8% towards 300 ppm H2 as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H2 response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW.

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