Sensing of the Molecular Spin in Spin-Crossover Nanoparticles with Micromechanical Resonators

Journal Article (2019)
Author(s)

Julien Dugay (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

Mónica Giménez-Marqués (Universidad de Valencia (ICMol))

Warner J. Venstra (Kavli institute of nanoscience Delft, TU Delft - QN/Afdelingsbureau)

Ramón Torres-Cavanillas (Universidad de Valencia (ICMol))

Umit N. Sheombarsing (Student TU Delft, Kavli institute of nanoscience Delft)

Nicola Manca (Kavli institute of nanoscience Delft, TU Delft - QN/Caviglia Lab, Università degli Studi di Genova)

Eugenio Coronado (Universidad de Valencia (ICMol))

Herre S.J. Van Der Zant (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

Research Group
QN/van der Zant Lab
DOI related publication
https://doi.org/10.1021/acs.jpcc.8b10096
More Info
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Publication Year
2019
Language
English
Research Group
QN/van der Zant Lab
Issue number
11
Volume number
123
Pages (from-to)
6778-6786
Downloads counter
273
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Institutional Repository
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Abstract


In the past years, the use of highly sensitive silicon microelectromechanical cantilevers has been proposed as a tool to characterize the spin-crossover phenomenon by employing fast optical readout of the motion. In this work, Fe
II
-based spin-crossover nanoparticles of the well-known [Fe(Htrz)
2
(trz)](BF
4
) complex wrapped with thin silica shells of different sizes will be studied by means of silicon microresonators. The silica shell will enhance its chemical stability, whereas the low thickness will allow a proper mechanical coupling between the cantilever and the spin-crossover core. To maximize the sensing of the spin-crossover phenomena, different cantilever geometries and flexural modes were employed. In addition, the experimental observations were also compared with COMSOL numerical simulations, which are in close agreement with them. The probe of spin-crossover phenomena with micro- and nanoelectromechanical actuators offers the possibility of preparing smart sensing memory devices near/above room temperature.

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