Low Temperature PureB Technology for CMOS Compatible Photodetectors

Doctoral thesis (2015)

Authors

Contributors

P.M. Sarro (promotor)
A.J.P. Theuwissen (promotor)
Department
Microelectronics (EEMCS) (TU Delft)
Copyright: © 2015 Mohammadi, V.
Chemical vapor deposition Low temperature boron deposition Ultrashallow p+n junction photodiode UV photodetector CMOS imager
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Published Date

09-03-2015

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ISBN:

978-94-6203-807-3

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Abstract

In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This technology is successfully employed to create near-ideal LT PureB (pure boron) diodes with low, deep-junction-like saturation currents which make it possible to fully integrate LT PureB photodiodes together with electronic interface circuits and other sensors on a single chip. In this way, smart sensor systems or even CCD or CMOS UV imagers can be realized.