A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Conference paper (2018)

Authors

Woojun Choi Yonsei University
Yongtae Lee Yonsei University
Seonhong Kim SK Hynix
Sanghoon Lee SK Hynix
Jieun Jang SK Hynix
Junhyun Chun SK Hynix
K.A.A. Makinwa Microelectronics
Youngcheol Chae Yonsei University
Department
Microelectronics
Copyright: © 2018 Woojun Choi, Yong-Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, K.A.A. Makinwa, Youngcheol Chae
DOI: https://doi.org/10.1109/ISSCC.2018.8310314
More Info
expand_more

Published Date

2018

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Department

Microelectronics

Abstract

In microprocessors and DRAMs, on-chip temperature sensors are essential
components, ensuring reliability by monitoring thermal gradients and hot
spots. Such sensors must be as small as possible, since multiple
sensors are required for dense thermal monitoring. However, conventional
BJT-based temperature sensors are not compatible with the sub-1V supply
of advanced processes. Subthreshold MOSFETs can operate from lower
supplies, but at high temperatures their performance is limited by
leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation
and small area with moderate accuracy, but require milliwatts of power
[3]. Recently, resistor-based sensors based on RC WienBridge (WB)
filters have realized high resolution and energy efficiency [4,5].
Fundamentally, they are robust to process and supply-voltage scaling.
However, their readout circuitry has been based on continuous-time (CT)
ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog
circuits and occupy considerable area (>0.7mm
2
).

Files

08310314.pdf
(.pdf | 0.992 Mb)
- Embargo expired in 30-03-2022