A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
Woojun Choi (Yonsei University)
Yong-Tae Lee (Yonsei University)
Seonhong Kim (SK Hynix)
Sanghoon Lee (SK Hynix)
Jieun Jang (SK Hynix)
Junhyun Chun (SK Hynix)
Kofi A.A. Makinwa (TU Delft - Microelectronics)
Youngcheol Chae (Yonsei University)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
In microprocessors and DRAMs, on-chip temperature sensors are essential
components, ensuring reliability by monitoring thermal gradients and hot
spots. Such sensors must be as small as possible, since multiple
sensors are required for dense thermal monitoring. However, conventional
BJT-based temperature sensors are not compatible with the sub-1V supply
of advanced processes. Subthreshold MOSFETs can operate from lower
supplies, but at high temperatures their performance is limited by
leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation
and small area with moderate accuracy, but require milliwatts of power
[3]. Recently, resistor-based sensors based on RC WienBridge (WB)
filters have realized high resolution and energy efficiency [4,5].
Fundamentally, they are robust to process and supply-voltage scaling.
However, their readout circuitry has been based on continuous-time (CT)
ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog
circuits and occupy considerable area (>0.7mm
2
).