PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region
Journal Article
(2012)
Author(s)
Amir Sammak (TU Delft - Electronic Components, Technology and Materials)
L. Qi (TU Delft - Electronic Components, Technology and Materials)
Wiebe De Boer (TU Delft - Old - EWI Sect. ECTM)
L.K. Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.sse.2012.04.023
To reference this document use:
https://resolver.tudelft.nl/uuid:0d29d8d4-cfe3-444d-b348-74f06da0544a
More Info
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Publication Year
2012
Language
English
Research Group
Electronic Components, Technology and Materials
Volume number
74
Pages (from-to)
126-133
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