Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)
Vahid Mohammadi (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Stoyan Nihtianov (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Changming Fang (Brunel University London, QN/High Resolution Electron Microscopy)
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