Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer (Scientific Reports, (2017), 7, 1, (13247), 10.1038/s41598-017-13100-0)
Journal Article
(2021)
Author(s)
V Mohammadi (TU Delft - Electronic Instrumentation)
Stoyan Nihtianov (TU Delft - Electronic Instrumentation)
C. Fang (Brunel University London, QN/High Resolution Electron Microscopy)
Research Group
Electronic Instrumentation
Copyright
© 2021 V. Mohammadi, S. Nihtianova, C. Fang
DOI related publication
https://doi.org/10.1038/s41598-021-99821-9
To reference this document use:
https://resolver.tudelft.nl/uuid:0df044d9-bb33-4859-b678-714f00dd4cbf
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Publication Year
2021
Language
English
Copyright
© 2021 V. Mohammadi, S. Nihtianova, C. Fang
Related content
Research Group
Electronic Instrumentation
Issue number
1
Volume number
11
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