A phonon scattering bottleneck for carrier cooling in lead-chalcogenide nanocrystals

Conference paper (2015)

Authors

P.A. Geiregat Universiteit Gent
Christophe Delerue IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Yolanda Justo Universiteit Gent
M. Aerts ChemE/Opto-electronic Materials - AS
F.C.M. Spoor ChemE/Opto-electronic Materials - AS
Dries Van Thourhout Universiteit Gent
L.D.A. Siebbeles ChemE/Opto-electronic Materials - AS
Guy Allan IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
A.J. Houtepen ChemE/Opto-electronic Materials - AS
Research Group
ChemE/Opto-electronic Materials (AS) (TU Delft)
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Published Date

2015

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

ChemE/Chemical Engineering

Research Group

ChemE/Opto-electronic Materials

Abstract

The cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by white light transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high-energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. Our approach allows for the first ever determination of hot carrier cooling rates, relevant in e.g. modeling of multiple exciton generation.