High frequency high voltage power conversion with silicon carbide power semiconductor devices

Abstract

A novel high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high energy efficiency, fast HV pulse speed and compact size advantages. The electrical and HV insulation design and analysis high frequency HV transformer and voltage multiplier circuit based on 1.2kV SiC Schottky diode are discussed in details. 1.2kV SiC MOSFETs are introduced in the power inverter with switching frequency from 300 kHz to 500 kHz. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 500W output power, 7kV output voltage HV generator prototype with 300 kHz to 500 kHz switching frequency is built in lab to validate the advantages on power density, energy efficiency and HV pulse speeds. The high frequency SiC HV generator prototype experimental results validate the power density, higher power efficiency and faster HV pulse speed advantages.