We present an investigation of the compact structure of the active galactic nucleus 2021+317 based on multiepoch very long baseline interferometry (VLBI) observations at 15, 22, and 43 GHz in the period from 2013 through 2024. The VLBI images show a core-jet structure extended to the south, with two stationary components in the northern region, one of which is likely to be the core of the source. We also detected two new moving jet components (S4 and S5) in the observations of 2021. Based on these observational findings, we analyzed two distinctive jet models involving one or another stationary component mentioned above as the jet core. One model assumes a moderate bulk motion velocity, a wider viewing angle, and a lower Doppler factor, with the magnetic field energy density significantly dominating over the nonthermal particle energy density. The other model involves a higher bulk motion velocity, a narrower viewing angle, and a higher Doppler factor, with an even greater dominance of magnetic field energy in the core. The position angle of the jet ridgeline rotates counterclockwise over the observed period. The apparent kinematics of the jet components is more consistent with a model of the precessing jet, which has recently completed the first half of the precession cycle. Our results provide constraints on the dynamic evolution of the jet and its interaction with the surrounding medium.

This paper presents the design and experimental results of the first chip-scale radio frequency MEMS gyrator based on hybridizing Lorentz-force and piezoelectric transduction. The MEMS gyrator has a non-reciprocal phase response of 180° and can be used as the building blocks for synthesizing complex non-reciprocal networks. The equivalent circuit and measured performance of a fabricated MEMS gyrator are presented, both showing the anticipated 180° phase difference. The demonstration marks the first time that non-reciprocity is attained at radio frequencies with an entirely passive chip-scale mechanical device. Various challenges in achieving strong coupling and low insertion loss for the designed devices will be discussed.

This paper investigates SiC power semiconductor devices in a three-phase active front-end Boost PWM rectifier for power conversion efficiency improvement. Different from Si IGBT based Boost PFC rectifier, the SiC MOSFET based Boost PFC rectifier can achieve the synchronous rectification by MOSFET channel reverse conduction for efficiency improvement. The operation principle difference of three-phase active frontend Boost PWM rectifier with SiC MOSFET and Si IGBT is introduced. The switching characterizations of 1.2kV SiC MOSFET are provided. 5kW 380VAC input, 800VDC output three-phase active front-end Boost PWM rectifier prototype is built in lab to evaluate the efficiency advantage with SiC device. All SiC power semiconductor devices based circuit achieves about 1.2% more efficient compared with all Si devices, and around 0.5% more efficient than Si IGBT & SiC diode hybrid device pair for the three-phase Boost PWM rectifier due to low switching loss of 1.2kV SiC MOSFET and reduced conduction loss from the synchronous rectification operation for 1.2kV SiC MOSFET.