Field effect enhancement in buffered quantum nanowire networks
Pavel Aseev (TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Sabbir A. Khan (University of Copenhagen)
Yu Liu (University of Copenhagen)
Alexandra Fursina (Microsoft Quantum Lab Delft, TU Delft - QRD/Kouwenhoven Lab)
Frenk Boekhout (TNO, TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre)
Rene Koops (TNO, TU Delft - QuTech Advanced Research Centre, TU Delft - BUS/General)
Emanuele Uccelli (TU Delft - BUS/General, TU Delft - QuTech Advanced Research Centre, TNO)
Leo P. Kouwenhoven (Microsoft Quantum Lab Delft, TU Delft - Applied Sciences, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
Peter Krogstrup (University of Copenhagen, TU Delft - QRD/Kouwenhoven Lab)
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Abstract
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.