Nature Communications is publishing an editorial expression of concern on the article “Ballistic superconductivity in semiconductor nanowires”, by H. Zhang et al. On 09 December 2021, the Editorial Staff was alerted by Vincent Mourik and two other researchers to potential problems in the manner in which raw data have been selected, processed and analysed. In response to these concerns, Nature Communications initiated an investigation by contacting the corresponding authors of the article and consulting with two independent experts. The investigation involved technical scrutiny of the additional analyses provided by the corresponding authors, including supplementary data from the repository https://zenodo.org/records/6851435. Based on the evidence presented, the Reviewers endorsed the publication of the correction note appended below. Readers are urged to take this information into consideration when interpreting the data presented in this article. Kun Zuo and Vincent Mourik also informed the editorial staff that they wished to be removed from authorship because in their opinion, the correction does not address the concerns with respect to the data and they do not endorse the validity of the claims and conclusions of the article. The author list in both the PDF and HTML has now been rectified. All authors,with the exception ofKenjiWatanabe and Takashi Taniguchi, disagreewith the publication of this Editorial Expression of Concern.

Correction to: Nature Communicationshttps://doi.org/10.1038/ncomms16025, published online 06 July 2017 The original version of this Article included the authors Kun Zuo and Vincent Mourik who wish to be removed from authorship. Consequently, the author affiliations for these authors have been removed from the ‘Authors and Affiliations’ section. The original version of the ‘Contributions’ statement, which read “H.Z. and Ö.G. fabricated the devices, performed the measurements and analysed the data. S.C.-B. performed the TEM analysis. M.P.N. and M.W. performed the numerical simulations. K.Z., V.M., F.K.d.V., J.v.V., M.W.A.d.M., J.D.S.B., D.J.v.W., M.Q.-P., M.C.C. and S.G. contributed to the experiments. D.C., S.P. and E.P.A.M.B. grew the InSb nanowires. S.K. prepared the lamellae for the TEM analysis. K.W. and T.T. synthesized the h-BN crystals. L.P.K. supervised the project. All authors contributed to the writing of the manuscript”, has been amended to read “H.Z. and Ö.G. fabricated the devices, performed the measurements and analysed the data. S.C.-B. performed the TEM analysis. M.P.N. and M.W. performed the numerical simulations. F.K.d.V., J.v.V., M.W.A.d.M., J.D.S.B., D.J.v.W., M.Q.-P., M.C.C. and S.G. contributed to the experiments. D.C., S.P. and E.P.A.M.B. grew the InSb nanowires. S.K. prepared the lamellae for the TEM analysis. K.W. and T.T. synthesized the h-BN crystals. L.P.K. supervised the project. All authors contributed to the writing of the manuscript”. This has been corrected in both the PDF and HTML versions of the article.

The proximity effect of superconductivity on confined states in semiconductors gives rise to various bound states such as Andreev bound states, Andreev molecules, and Majorana zero modes. While such bound states do not conserve charge, their fermion parity is a good quantum number. One way to measure parity is to convert it to charge first, which is then sensed. In this work, we sense the charge of Andreev bound states and Andreev molecules in an InSb-Al hybrid nanowire using an integrated quantum dot operated as a charge sensor. We show how charge sensing measurements can resolve the even and odd states of an Andreev molecule, without affecting the parity. Such an approach can be further used for parity measurements of Majorana zero modes in Kitaev chains based on quantum dots.

Correction to: Nature Nanotechnologyhttps://doi.org/10.1038/s41565-017-0032-8, published online 15 January 2018. The Letter reports Majorana signatures in hybrid InSb semiconductor nanowire–NbTiN superconductor devices. The devices exhibit a conductance plateau near the conductance quantum 2e²/h at bias voltages above the superconducting gap (normal conductance), accompanied by an enhanced Andreev conductance at bias voltages below the superconducting gap (subgap conductance). We have attributed these experimental observations to ballistic transport as supported by a theoretical analysis¹, finding mean free paths on the order of or larger than the effective wire segment (the segment covered by the superconducting electrode). Here, we correct errors discovered on reanalysis of the original data², following concerns raised by readers. Due to the age of the paper, it cannot be corrected directly in the original publication, thus the updates are provided via this amendment. We provide additional discussion on the claim of ballistic transport so as to avoid misinterpretations. External peer review of the reanalysis concluded that the claims in the Letter remain. An extended public repository including data obtained from nanowire devices that were not included in the publication can be found in ref. ². We note the lack of a series of flat and precisely quantized conductance plateaus (a staircase), a clear ballistic transport characteristic (see the two newly included Supplementary Figs. 1 and 7 showing larger voltage ranges of Fig. 1 and the original Supplementary Fig. 5). Our earlier studies on ballistic transport in nanowire devices^3,4 indicate that vapour–liquid–solid nanowires do not have the proper geometry for observing a conductance staircase without the application of a magnetic field perpendicular to the wire axis, which requires ideal (Landauer) reservoirs interfacing the ballistic region, absorbing charge carriers with near-unit probability. Similar to our earlier studies, ohmic contacts in the present nanowire devices do not satisfy the conditions of Landauer reservoirs. However, the transport in the effective wire segment can nevertheless be ballistic whose characteristic is a plateau feature near 2e²/h in normal conductance together with an enhanced Andreev conductance. Importantly, precise quantization is not realistic, prevented by the two-terminal device geometry, inevitably decreasing the conductance. In summary, a plateau feature with an enhanced Andreev conductance together with our theoretical analyses indicate that a large fraction of transport is ballistic over distances of the order of our device length. We add a discussion to the main text of the Letter as follows: “… followed by a dip in conductance due to channel mixing²⁰ [ref. ¹ below]. We do not observe higher plateaus (Supplementary Figs. 1 and 7), which we attribute to the contacts not satisfying the conditions of Landauer reservoirs, resulting in residual scattering more effective at larger conductance. This is in line with our earlier studies^25,39 [refs. ^4,5 below] which indicated that vapour–liquid–solid nanowires do not have the proper geometry for observing a conductance staircase without the application of a perpendicular magnetic field. From the absence of quantum dots, the observed induced gap …”. The following text should also have been included in the abstract: “… exhibiting clear ballistic transport properties manifested by a conductance plateau with an Andreev enhancement, albeit lacking a quantized conductance staircase hindered by the device geometry.” The conductance values reported in the publication are ~8% lower (near 2e²/h) than the actual value (corrected Fig. 1). This deviation is due to a drop in the gain of the current-to-voltage amplifier at an ac excitation frequency of 67 Hz⁵. As a result, there is a slight change in the Andreev conductance enhancement factor and the superconducting contact transparency extracted from the enhancement (a comparison between the values quoted in the publication and the corrected ones is given below in B). The general conclusions do not rely on the exact value of the conductance as precise quantization is not expected due to the two-terminal device geometry. The subtracted series resistance of 3 kΩ in the original Fig. 1 was an overestimation (see corrected Fig. 1 in the Supplementary Data file). The subtraction of 3 kΩ was not mentioned in the original publication. A comparison of the original and corrected Fig. 1 is presented in a Supplementary Data file accompanying this correction. For all the figures in the original publication except Fig. 1, we either subtracted a contact resistance value of 0.5 kΩ, which is an underestimation¹, or no resistance at all. We note that in tunneling measurements the overall resistance is significantly higher than the normal metal contact resistance whose contribution can therefore be neglected. Figure 1, however, was used to estimate the superconducting contact transparency and Andreev enhancement in the high conductance regime, requiring a realistic exclusion of the contact resistance. Following our previous paper⁴, which found normal metal contact resistance values between 1.5–3.25 kΩ per contact and was based on fitting the measured conductance using theory (single mode interfacing a superconductor), which provided reasonable agreement after excluding 3 kΩ, we subtracted 3 kΩ to exclude the resistance of the normal metal contact. During our reanalysis, we have discovered that the minimum resistance of this device at the largest applied gate voltages is 2.9 kΩ, a value providing an upper bound on the contact resistance. Here, 2.9 kΩ would be the contact resistance under the assumption that the nanowire itself has zero resistance at largest gate voltages. The contact resistance can be estimated with an alternative method by subtracting a series resistance to match the observed conductance plateau at bias voltages above the superconducting gap to the expected quantized value, a procedure not done in the original publication. By taking the conductance averaged at positive and negative |V| ~ 1.7 mV (around the largest bias voltages available for this analysis) we find that the quantized value is reached for a contact resistance of 0.77 kΩ. (Considering only the positive bias and separately only the negative bias results in a range of 0–2.13 kΩ for the contact resistance.) In our corrected estimate of the contact resistance, we have applied the calibration procedure⁵ that corrects for ac circuit effects, uses calibrated values for the series resistance of the setup where Fig. 1 was measured and directly corrects the error listed in A above. Upon reanalysis we estimate the following contact resistance values, enhancement factors and transparencies: (Table presented.) Contact resistance Enhancement factor Transparency Lower bound 0 kΩ 1.26 0.88 Conservative estimation¹ (used in corrected Fig. 1) 0.5 kΩ 1.32 0.90 Current best estimate 0.77 kΩ 1.36 0.90 Original estimate in paper 3 kΩ >1.5 >0.93 The corrected superconducting contact transparency value of 0.9 does not affect the claim of high transparency. The claim of ballistic transport does not rest on the exact value of the conductance plateau and hence is also unaffected. The original Methods section omits the indication of subtracted series resistances which account for the normal metal contact resistance in each figure. The following is included here for the corrected Methods: The original Methods section omits the indication of subtracted series resistances which account for the normal metal contact resistance in each figure. The following is included here for the corrected Methods: “Contact resistance treatment. A fixed-value series resistance of 0.5 kΩ has been subtracted in Figs. 1 and 4, Supplementary Figs. 1, 2b,c and 4–9 to account for the contact resistance of the normal metal lead. This value is smaller than the lowest contact resistance we have obtained for InSb nanowire devices²⁵ (ref. ⁴ below), which makes the interface transparency estimated from Fig. 1 a lower bound. For the remaining figures, no series resistance has been subtracted to account for the normal metal contact resistance.” In the original Supplementary Fig. 5 (now Supplementary Fig. 6), a charge jump was corrected by removal of 12 line traces (corresponding to +0.15 V to +0.04 V in gate voltage in the measured data) and offset of the gate voltage axis by 0.12 V after the charge jump (–1 V to +0.03 V) to maintain continuity of the axis. This processing was not mentioned in the original publication. The corrected Supplementary Fig. 6 excludes this processing and represents the data as measured. In the original Supplementary Fig. 5 (now Supplementary Fig. 6), a charge jump was corrected by removal of 12 line traces (corresponding to +0.15 V to +0.04 V in gate voltage in the measured data) and offset of the gate voltage axis by 0.12 V after the charge jump (–1 V to +0.03 V) to maintain continuity of the axis. This processing was not mentioned in the original publication. The corrected Supplementary Fig. 6 excludes this processing and represents the data as measured. A comparison of the original and corrected Fig. SI5 (now Fig. SI6) is presented in a Supplementary Data file accompanying this correction. Original Supplementary Fig. 1f (now Supplementary Fig. 2f): The offset mentioned in the caption is erroneously given as 0.006 × 2e²/h but is 0.01 × 2e²/h. Original Supplementary Fig. 4a,b (now Supplementary Fig. 5a,b) were indicated to present data from Fig. 2a (or original Supplementary Fig. 1a). This is incorrect. The data used are from the original Supplementary Fig. 1b (now Supplementary Fig. 2b) which has the same measurement settings as in Fig. 2a except the barrier gate is –1.5 V (the barrier gate is –1.4 V in Fig. 2a or original Supplementary Fig. 1a). In the original panels c–e of Supplementary Fig. 7 (now Supplementary Fig. 9c–e) the bias polarity is mistakenly inverted.

Superconducting diodes are recently-discovered quantum analogues of classical diodes. The superconducting diode effect relies on the breaking of both time-reversal and inversion symmetry. As a result, the critical current of a superconductor can become dependent on the direction of the applied current. The combination of these ingredients naturally occurs in proximitized semiconductors under a magnetic field, which is also predicted to give rise to exotic physics such as topological superconductivity. In this work, we use InSb nanowires proximitized by Al to investigate the superconducting diode effect. Through shadow-wall lithography, we create short Josephson junctions with gate control of both the proximitized weak link as well as the proximitized leads. When the magnetic field is applied perpendicular to the nanowire axis, the superconducting diode effect depends on the out-of-plane angle. In particular, it is strongest along a specific angle, which we interpret as the direction of the spin-orbit field in the proximitized leads. Moreover, the electrostatic gates can be used to drastically alter this effect and even completely suppress it. Finally, we also observe a significant gate-tunable diode effect when the magnetic field is applied parallel to the nanowire axis. Due to the considerable degree of control via electrostatic gating, the semiconductor-superconductor hybrid Josephson diode emerges as a promising element for innovative superconducting circuits and computation devices.

Andreev bound states are fermionic states localized in weak links between superconductors which can be occupied with spinful quasiparticles. Microwave experiments using superconducting circuits with InAs/Al nanowire Josephson junctions have recently enabled probing and coherent manipulation of Andreev states but have remained limited to zero or small magnetic fields. Here, we use a flux-tunable superconducting circuit compatible in magnetic fields up to 1T to perform spectroscopy of spin-polarized Andreev states up to ∼250mT, beyond which the spectrum becomes gapless. We identify singlet and triplet states of two quasiparticles occupying different Andreev states through their dispersion in magnetic field. These states are split by exchange interaction and couple via spin-orbit coupling, analogously to two-electron states in quantum dots. We also show that the magnetic field allows to drive a direct spin-flip transition of a single quasiparticle trapped in the junction. Finally, we measure a gate- and field-dependent anomalous phase shift of the Andreev spectrum, of magnitude up to ∼0.7π. Our observations demonstrate alternative ways to manipulate Andreev states in a magnetic field and reveal spin-polarized triplet states that carry supercurrent.

We study the current-phase relation (CPR) of an InSb-Al nanowire Josephson junction in parallel magnetic fields up to 700 mT. At high magnetic fields and in narrow voltage intervals of a gate under the junction, the CPR exhibits π shifts. The supercurrent declines within these gate intervals and shows asymmetric gate voltage dependence above and below them. We detect these features sometimes also at zero magnetic field. The observed CPR properties are reproduced by a theoretical model of supercurrent transport via interference between direct transmission and a resonant localized state.

Andreev spin qubits have recently emerged as an alternative qubit platform with realizations in semiconductor–superconductor hybrid nanowires. In these qubits, the spin degree of freedom of a quasiparticle trapped in a Josephson junction is intrinsically spin–orbit coupled to the supercurrent across the junction. This interaction has previously been used to perform spin readout, but it has also been predicted to facilitate inductive multi-qubit coupling. Here we demonstrate a strong supercurrent-mediated longitudinal coupling between two distant Andreev spin qubits. We show that it is both gate- and flux-tunable into the strong coupling regime and, furthermore, that magnetic flux can be used to switch off the coupling in situ. Our results demonstrate that integrating microscopic spin states into a superconducting qubit architecture can combine the advantages of both semiconductors and superconducting circuits and pave the way to fast two-qubit gates between distant spins.

The formation of a topological superconducting phase in a quantum-dot-based Kitaev chain requires nearest neighbor crossed Andreev reflection and elastic cotunneling. Here, we report on a hybrid InSb nanowire in a three-site Kitaev chain geometry - the smallest system with well-defined bulk and edge - where two superconductor-semiconductor hybrids separate three quantum dots. We demonstrate pairwise crossed Andreev reflection and elastic cotunneling between both pairs of neighboring dots and show sequential tunneling processes involving all three quantum dots. These results are the next step toward the realization of topological superconductivity in long Kitaev chain devices with many coupled quantum dots.

Majorana bound states constitute one of the simplest examples of emergent non-Abelian excitations in condensed matter physics. A toy model proposed by Kitaev shows that such states can arise at the ends of a spinless p-wave superconducting chain¹. Practical proposals for its realization^2,3 require coupling neighbouring quantum dots (QDs) in a chain through both electron tunnelling and crossed Andreev reflection⁴. Although both processes have been observed in semiconducting nanowires and carbon nanotubes^5–8, crossed-Andreev interaction was neither easily tunable nor strong enough to induce coherent hybridization of dot states. Here we demonstrate the simultaneous presence of all necessary ingredients for an artificial Kitaev chain: two spin-polarized QDs in an InSb nanowire strongly coupled by both elastic co-tunnelling (ECT) and crossed Andreev reflection (CAR). We fine-tune this system to a sweet spot where a pair of poor man’s Majorana states is predicted to appear. At this sweet spot, the transport characteristics satisfy the theoretical predictions for such a system, including pairwise correlation, zero charge and stability against local perturbations. Although the simple system presented here can be scaled to simulate a full Kitaev chain with an emergent topological order, it can also be used imminently to explore relevant physics related to non-Abelian anyons.

A short superconducting segment can couple attached quantum dots via elastic cotunneling (ECT) and crossed Andreev reflection (CAR). Such coupled quantum dots can host Majorana bound states provided that the ratio between CAR and ECT can be controlled. Metallic superconductors have so far been shown to mediate such tunneling phenomena, albeit with limited tunability. Here, we show that Andreev bound states formed in semiconductor-superconductor heterostructures can mediate CAR and ECT over mesoscopic length scales. Andreev bound states possess both an electron and a hole component, giving rise to an intricate interference phenomenon that allows us to tune the ratio between CAR and ECT deterministically. We further show that the combination of intrinsic spin-orbit coupling in InSb nanowires and an applied magnetic field provides another efficient knob to tune the ratio between ECT and CAR and optimize the amount of coupling between neighboring quantum dots.

Spin qubits in semiconductors are a promising platform for producing highly scalable quantum computing devices. However, it is difficult to realize multiqubit interactions over extended distances. Superconducting spin qubits provide an alternative by encoding a qubit in the spin degree of freedom of an Andreev level. These Andreev spin qubits have an intrinsic spin–supercurrent coupling that enables the use of recent advances in circuit quantum electrodynamics. The first realization of an Andreev spin qubit encoded the qubit in the excited states of a semiconducting weak link, leading to frequent decay out of the computational subspace. Additionally, rapid qubit manipulation was hindered by the need for indirect Raman transitions. Here we use an electrostatically defined quantum dot Josephson junction with large charging energy, which leads to a spin-split doublet ground state. We tune the qubit frequency over a frequency range of 10 GHz using a magnetic field, which also enables us to investigate the qubit performance using direct spin manipulation. An all-electric microwave drive produces Rabi frequencies exceeding 200 MHz. We embed the Andreev spin qubit in a superconducting transmon qubit, demonstrating strong coherent qubit–qubit coupling. These results are a crucial step towards a hybrid architecture that combines the beneficial aspects of both superconducting and semiconductor qubits.

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick AlOx layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. In this work, we make multiple tunnel probes along single nanowire hybrids and successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

The proximity effect in semiconductor-superconductor nanowires is expected to generate an induced gap in the semiconductor. The magnitude of this induced gap, together with the semiconductor properties like spin-orbit coupling and g-factor, depends on the coupling between the materials. It is predicted that this coupling can be adjusted through the use of electric fields. We study this phenomenon in InSb/Al/Pt hybrids using nonlocal spectroscopy. We show that these hybrids can be tuned such that the semiconductor and superconductor are strongly coupled. In this case, the induced gap is similar to the superconducting gap in the Al/Pt shell and closes only at high magnetic fields. In contrast, the coupling can be suppressed which leads to a strong reduction of the induced gap and critical magnetic field. At the crossover between the strong-coupling and weak-coupling regimes, we observe the closing and reopening of the induced gap in the bulk of a nanowire. Contrary to expectations, it is not accompanied by the formation of zero-bias peaks in the local conductance spectra. As a result, this cannot be attributed conclusively to the anticipated topological phase transition and we discuss possible alternative explanations.

Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field (BSO) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the interdot tunnel couplings, we find the measured dispersive signal depends on the electron-charge occupancy, as well as on the amplitude and orientation of the external magnetic field. The dispersive signal is mostly insensitive to the external field orientation when a DQD is occupied by a total odd number of electrons. For a DQD occupied by a total even number of electrons, the dispersive signal is reduced when the finite external magnetic field aligns with the effective BSO orientation. This fact enables the identification of BSO orientations for different DQD electron occupancies. The BSO orientation varies drastically between charge transitions, and is generally neither perpendicular to the nanowire nor in the chip plane. Moreover, BSO is similar for pairs of transitions involving the same valence orbital, and varies between such pairs. Our work demonstrates the practicality of DGS in characterizing spin-orbit interactions in quantum dot systems, without requiring any current flow through the device.