Correction to: Nature Communicationshttps://doi.org/10.1038/ncomms16025, published online 06 July 2017 The original version of this Article included the authors Kun Zuo and Vincent Mourik who wish to be removed from authorship. Consequently, the author affiliations for these authors have been removed from the ‘Authors and Affiliations’ section. The original version of the ‘Contributions’ statement, which read “H.Z. and Ö.G. fabricated the devices, performed the measurements and analysed the data. S.C.-B. performed the TEM analysis. M.P.N. and M.W. performed the numerical simulations. K.Z., V.M., F.K.d.V., J.v.V., M.W.A.d.M., J.D.S.B., D.J.v.W., M.Q.-P., M.C.C. and S.G. contributed to the experiments. D.C., S.P. and E.P.A.M.B. grew the InSb nanowires. S.K. prepared the lamellae for the TEM analysis. K.W. and T.T. synthesized the h-BN crystals. L.P.K. supervised the project. All authors contributed to the writing of the manuscript”, has been amended to read “H.Z. and Ö.G. fabricated the devices, performed the measurements and analysed the data. S.C.-B. performed the TEM analysis. M.P.N. and M.W. performed the numerical simulations. F.K.d.V., J.v.V., M.W.A.d.M., J.D.S.B., D.J.v.W., M.Q.-P., M.C.C. and S.G. contributed to the experiments. D.C., S.P. and E.P.A.M.B. grew the InSb nanowires. S.K. prepared the lamellae for the TEM analysis. K.W. and T.T. synthesized the h-BN crystals. L.P.K. supervised the project. All authors contributed to the writing of the manuscript”. This has been corrected in both the PDF and HTML versions of the article.

Moiré superlattices in 2D van der Waals (vdW) materials enable the engineering of local polarization textures and electrostatic potential landscapes. While polarization vortices are demonstrated in bilayer transition metal dichalcogenides (TMDs), their formation mechanisms in multilayers remain unclear. Here, it is shown that in multi-twisted small-angle multilayer WSe₂, nanoscale strain fields, not twist alone, govern the emergence, and stability of polarization vortices. Using 4D scanning transmission electron microscopy (4D-STEM) with an electron microscope pixel array detector (EMPAD), local electrostatic potential variations and strain distributions are spatially resolved with nanometer precision. It is found that vortex-like polarization textures emerge exclusively in regions with significant nanoscale strain, revealing a direct interplay between lattice reconstruction and Moiré-induced polarization textures in twisted multilayers. The findings establish strain as a key tuning parameter for Moiré-induced polarization control, providing new pathways for strain-engineered 2D vdW materials, chiral dipole textures, and next-generation low-power electronic and optoelectronic devices.

Nature Communications is publishing an editorial expression of concern on the article “Ballistic superconductivity in semiconductor nanowires”, by H. Zhang et al. On 09 December 2021, the Editorial Staff was alerted by Vincent Mourik and two other researchers to potential problems in the manner in which raw data have been selected, processed and analysed. In response to these concerns, Nature Communications initiated an investigation by contacting the corresponding authors of the article and consulting with two independent experts. The investigation involved technical scrutiny of the additional analyses provided by the corresponding authors, including supplementary data from the repository https://zenodo.org/records/6851435. Based on the evidence presented, the Reviewers endorsed the publication of the correction note appended below. Readers are urged to take this information into consideration when interpreting the data presented in this article. Kun Zuo and Vincent Mourik also informed the editorial staff that they wished to be removed from authorship because in their opinion, the correction does not address the concerns with respect to the data and they do not endorse the validity of the claims and conclusions of the article. The author list in both the PDF and HTML has now been rectified. All authors,with the exception ofKenjiWatanabe and Takashi Taniguchi, disagreewith the publication of this Editorial Expression of Concern.

Localized plasmon resonances in 2D transition metal dichalcogenides (TMDs) offer a powerful means to enhance light–matter interactions at the nanoscale, making them ideal candidates for advanced optoelectronic applications. However, disentangling the complex plasmonic interactions in these materials, especially in the low-energy regime, presents significant challenges. Herein, localized plasmon resonances in chemical vapor deposition-grown tungsten disulfide (WS2) nanotriangles, using a combination of advanced spectral analysis and simulation techniques, is investigated. By combining non-negative matrix factorization with electron energy loss spectroscopy, distinct plasmonic modes to provide a comprehensive analysis of the plasmonic landscape of individual and stacked WS2 nanotriangles are identified and characterized. Furthermore, the dispersion relation of these localized plasmon resonances is quantified and their evolution across different WS2 triangular geometries is evaluated. Experimental characterization of plasmonic resonances in WS2 through dedicated numerical simulations based on the PyGDM package is validated. The findings highlight the critical role of localized plasmon resonances in modulating the electronic and optical properties of WS2, offering new insights into the design and optimization of TMD-based devices for optoelectronic and nanophotonic applications.

Achieving nanoscale strain fields mapping in intricate van der Waals (vdW) nanostructures, like twisted flakes and nanorods, presents several challenges due to their complex geometry, small size, and sensitivity limitations. Understanding these strain fields is pivotal as they significantly influence the optoelectronic properties of vdW materials, playing a crucial role in a plethora of applications ranging from nanoelectronics to nanophotonics. Here, a novel approach for achieving a nanoscale-resolved mapping of strain fields across entire micron-sized vdW nanostructures using four-dimensional (4D) scanning transmission electron microscopy (STEM) imaging equipped with an electron microscope pixel array detector (EMPAD) is presented. This technique extends the capabilities of STEM-based strain mapping by means of the exit-wave power cepstrum method incorporating automated peak tracking and K-means clustering algorithms. This approach is validated on two representative vdW nanostructures: a two-dimensional (2D) MoS₂ thin twisted flakes and a one-dimensional (1D) MoO₃/MoS₂ nanorod heterostructure. Beyond just vdW materials, the versatile methodology offers broader applicability for strain-field analysis in various low-dimensional nanostructured materials. This advances the understanding of the intricate relationship between nanoscale strain patterns and their consequent optoelectronic properties.

Twisted 2D materials present an enticing platform for exploring diverse electronic properties owning to the tunability of their bandgap energy. However, the intricate relationship between local heterostrain fields, thickness, and bandgap energy remains insufficiently understood, particularly at the nanoscale. Here, it presents a comprehensive nanoscale study elucidating the remarkable sensitivity of the bandgap energy to both thickness and heterostrain fields within twisted WS₂ nanostructures. This approach integrates electron energy-loss spectroscopy (EELS) enhanced by machine learning with 4D scanning transmission electron microscopy (STEM). Through this synergistic methodology, enhancements up to 20% in the bandgap energy is unveiled depending on the specimen thickness. This phenomenon is traced back to sizable deformation angles present within individual layers, which can be directly linked to distinct variations in local heterostrain fields. The findings represent a significant advancement in comprehending the electronic behavior of twisted 2D materials and introduce a novel methodological framework with far-reaching implications for twistronics and the investigation of other materials within the nanoscience domain.

Chromium dioxide (CrO₂) nanowires with their half-metallic ferromagnetic properties have shown great promise in spintronics applications. However, growth of such wires remains challenging. We used the Selective Area growth method to fabricate high quality epitaxial CrO₂ wires on a TiO₂ substrate, using trenches oriented both along the substrate [001] c-axis and along the [010] b-axis, which are the magnetically easy and hard axis of the wire, respectively. We investigated the morphology of the wires by high-resolution transmission electron microscopy (TEM) and measured their physical properties, in particular magnetoresistance (MR) and the Anomalous Hall Effect (AHE). TEM images showed that the morphology of the wires grown along the two axes are very different. MR data show very sharp switching for c-axis grown wires (the easy axis), even for quite large wire widths. The AHE is found to be different for c-axis wires and b-axis wires, which we argue to be due to a different wire morphology on the nanoscale.

This study presents an in-depth investigation of the electronic properties and bandgap energy distribution in 1D molybdenum disulfide (1D-MoS₂) nanostructures. Through a combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy-loss spectroscopy (EELS), it reveals significant differences between 1D-MoS₂ nanostructures and their 2D counterparts, shedding light on their localized exciton behavior and their bandgap energy modulation within the nanostructures. Excitonic peaks at around 2 and 3 eV appear localized at the ends or along the sides of the 1D-MoS₂ nanostructures, while the plasmonic resonance at 8.3 eV retains its inner-region localization. It demonstrates the spatial dependence of the bandgap energy, with the central region exhibiting a bandgap of approximately 1.2 eV, consistent with bulk MoS₂, while regions characterized by curvature-induced local strain fields exhibit instead a noticeable reduction. The findings provide valuable insights into the intricate relationship between excitonic behavior and bandgap sensitivity in 1D-MoS₂ nanostructures, streamlining the design and optimization of nanophotonic and optoelectronic devices.

Among the many potential applications of topological insulator materials, their broad potential for the development of novel tunable plasmonics at THz and mid-infrared frequencies for quantum computing, terahertz detectors, and spintronic devices is particularly attractive. The required understanding of the intricate relationship between nanoscale crystal structure and the properties of the resulting plasmonic resonances remains, however, elusive for these materials. Specifically, edge- and surface-induced plasmonic resonances, and other collective excitations, are often buried beneath the continuum of electronic transitions, making it difficult to isolate and interpret these signals using techniques such as electron energy-loss spectroscopy (EELS). Here we focus on the experimentally clean energy-gain EELS region to characterise collective excitations in the topologically insulating material Bi₂Te₃ and correlate them with the underlying crystalline structure with nanoscale resolution. We identify with high significance the presence of a distinct energy-gain peak around −0.8eV, with spatially-resolved maps revealing that its intensity is markedly enhanced at the edge regions of the specimen. Our findings illustrate the reach of energy-gain EELS analyses to accurately map collective excitations in quantum materials, a key asset in the quest towards new tunable plasmonic devices.

The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle physics and makes possible the automated processing and interpretation of spectral images from electron energy loss spectroscopy (EELS). Individual spectra are classified as a function of the thickness with K-means clustering, and then used to train a deep-learning model of the zero-loss peak background. As a proof of concept we assess the band gap and dielectric function of InSe flakes and polytypic WS2 nanoflowers and correlate these electrical properties with the local thickness. Our flexible approach is generalizable to other nanostructured materials and to higher-dimensional spectroscopies and is made available as a new release of the open-source EELSfitter framework.

Recent studies of transition metal dichalcogenides (TMDs) have revealed exciting optical properties, such as stable excitons and chiral light–matter interactions. Chemical vapor deposition techniques provide a platform for the fabrication of nanostructures with diverse geometries, ranging from horizontal flakes to flower-like structures. Raman spectroscopy is commonly used to characterize TMDs and their properties. Here, we use polarization-resolved Raman spectroscopy to probe the nanogeometry and orientation of WS 2 nanoflower petals.Exciting the nanoflowers with linearly polarized light, we observe an enhanced Raman response from flower petals oriented along the excitation polarization direction. Furthermore, the helicity-resolved Raman response of vertically oriented wall-like flower petals exhibits clear differences with horizontally oriented flakes. Although the photoluminescence from the nanoflowers is strongly reduced, the Raman response upon excitation in resonance with the WS 2 excitonic transition does reveal the presence of the exciton, which results in a distinct temperature dependence of the Raman response.

The phenomenon of polytypism, namely unconventional crystal phases displaying a mixture of stacking sequences, represents a powerful handle to design and engineer novel physical properties in two-dimensional (2D) materials. In this work, we characterize from first-principles the optoelectronic properties associated with the 2H/3R polytypism occurring in WS₂ nanomaterials by means of density functional theory (DFT) calculations. We evaluate the band gap, optical response, and energy-loss function associated with 2H/3R WS₂ nanomaterials and compare our predictions with experimental measurements of electron energy-loss spectroscopy (EELS) carried out in nanostructures exhibiting the same polytypism. Our results provide further input to the ongoing efforts toward the integration of polytypic 2D materials into functional devices.

Tailoring the specific stacking sequence (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, knowledge of TMD nanomaterials based on mixed 2H/3R polytypes is far more limited. In this work, mixed 2H/3R free-standing WS₂ nanostructures displaying a flower-like configuration are fingerprinted by means of state-of-the-art transmission electron microscopy. Their rich variety of shape-morphology configurations is correlated with relevant local electronic properties such as edge, surface, and bulk plasmons. Machine learning is deployed to establish that the 2H/3R polytype displays an indirect band gap of (Formula presented.). Further, high resolution electron energy-loss spectroscopy reveals energy-gain peaks exhibiting a gain-to-loss ratio greater than unity, a property that can be exploited for cooling strategies of atomically-thin TMD nanostructures and devices built upon them. The findings of this work represent a stepping stone towards an improved understanding of TMD nanomaterials based on mixed crystalline phases.

We characterize the polarization properties of the photoluminescence from CVD-grown WS2 monolayer flakes. We find an inverse relationship between the non-uniform WS2 photoluminescence intensity, the valley polarization and the valley coherence.

We characterize the optical Raman response of CVD-grown WS2 pyramids and nanoflowers. Studying the dependence of the Raman features on position, temperature and polarization, we find how the geometry of the nanostructures induces spectral modifications.

Exploiting the information provided by electron energy-loss spectroscopy (EELS) requires reliable access to the low-loss region where the zero-loss peak (ZLP) often overwhelms the contributions associated to inelastic scatterings off the specimen. Here we deploy machine learning techniques developed in particle physics to realise a model-independent, multidimensional determination of the ZLP with a faithful uncertainty estimate. This novel method is then applied to subtract the ZLP for EEL spectra acquired in flower-like WS₂ nanostructures characterised by a 2H/3R mixed polytypism. From the resulting subtracted spectra we determine the nature and value of the bandgap of polytypic WS₂, finding E_BG=1.6_−0.2^+0.3eV with a clear preference for an indirect bandgap. Further, we demonstrate how this method enables us to robustly identify excitonic transitions down to very small energy losses. Our approach has been implemented and made available in an open source PYTHON package dubbed EELSfitter.

Due to their intriguing optical properties, including stable and chiral excitons, two-dimensional transition metal dichalcogenides (2D-TMDs) hold the promise of applications in nanophotonics. Chemical vapor deposition (CVD) techniques offer a platform to fabricate and design nanostructures with diverse geometries. However, the more exotic the grown nanogeometry, the less is known about its optical response. WS₂nanostructures with geometries ranging from monolayers to hollow pyramids have been created. The hollow pyramids exhibit a strongly reduced photoluminescence with respect to horizontally layered tungsten disulphide, facilitating the study of their clear Raman signal in more detail. Excited resonantly, the hollow pyramids exhibit a great number of higher-order phononic resonances. In contrast to monolayers, the spectral features of the optical response of the pyramids are position dependent. Differences in peak intensity, peak ratio and spectral peak positions reveal local variations in the atomic arrangement of the hollow pyramid crater and sides. The position-dependent optical response of hollow WS₂pyramids is characterized and attributed to growth-induced nanogeometry. Thereby the first steps are taken towards producing tunable nanophotonic devices with applications ranging from opto-electronics to non-linear optics.

We report on the fabrication of molybdenum (Mo) nanopillar (NP) arrays with NP diameters down to 75 nm by means of deep-reactive ion etching at cryogenic temperatures. A variable-thickness Mo metal layer sputtered onto a Si₃N₄/Si substrate makes possible NPs with different lengths in a controllable manner. We demonstrate how our fabrication strategy leads to tunable cross-sections with different geometries, including hexagonal, cylindrical, square and triangular shapes, by using electron beam lithography on hydrogen silsesquioxane negative tone resist. To ensure well-defined facets and surfaces, we employ deep-reactive ion etching in a gas mixture of SF₆ and O₂ at cryogenic temperatures in an inductively coupled plasma reactive ion etching (ICP-RIE) system. These results represent an attractive route towards the realization of high-density Mo NP arrays for applications from nanoelectronics to quantum sensing and hydrogen evolution reaction catalysis.

Two-dimensional Transition Metal Dichalcogenites (2D TMDs) have recently attracted enormous scientific attention for their unique optical properties. 2D TMDs are semiconductors with a direct bandgap in the visible wavelength range. In their valleys, stable excitons are formed even at room-temperature. A valley pseudospin can be attributed to each valley, making it possible to address each valley individually with circularly polarized light.

The fabrication of 2D materials, such as transition metal dichalcogenides (TMDs), in geometries beyond the standard platelet-like configuration exhibits significant challenges which severely limit the range of available morphologies. These challenges arise due to the anisotropic character of their bonding van der Waals out-of-plane while covalent in-plane. Furthermore, industrial applications based on TMD nanostructures with non-standard morphologies require full control on the size-, morphology-, and position on the wafer scale. Such a precise control remains an open problem of which solution would lead to the opening of novel directions in terms of optoelectronic applications. Here, a novel strategy to fabricate position-controlled Mo/MoS₂ core–shell nanopillars (NPs) is reported on. Metal-Mo NPs are first patterned on a silicon wafer. These Mo NPs are then used as scaffolds for the synthesis of Mo/MoS₂ core/shell NPs by exposing them to a rich sulfur environment. Transmission electron microscopy analysis reveals the core/shell nature of the NPs. It is demonstrated that individual Mo/MoS₂ NPs exhibits significant nonlinear optical processes driven by the MoS₂ shell, realizing a precise localization of the nonlinear signal. These results represent an important step towards realizing 1D TMD-based nanostructures as building blocks of a new generation of nanophotonic devices.