Illuminating the Electronic Properties of WS2 Polytypism with Electron Microscopy
S.E. van Heijst (TU Delft - QN/Conesa-Boj Lab, Kavli institute of nanoscience Delft)
Masaki Mukai (JEOL Ltd., Japan)
Eiji Okunishi (JEOL Ltd., Japan)
Hiroki Hashiguchi (JEOL Ltd., Japan)
Laurien I. Roest (Kavli institute of nanoscience Delft, Student TU Delft)
L.A. Maduro (Kavli institute of nanoscience Delft, TU Delft - QN/Conesa-Boj Lab)
Juan Rojo (Vrije Universiteit Amsterdam)
S. Conesa Boj (Kavli institute of nanoscience Delft, TU Delft - QN/Conesa-Boj Lab)
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Abstract
Tailoring the specific stacking sequence (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, knowledge of TMD nanomaterials based on mixed 2H/3R polytypes is far more limited. In this work, mixed 2H/3R free-standing WS2 nanostructures displaying a flower-like configuration are fingerprinted by means of state-of-the-art transmission electron microscopy. Their rich variety of shape-morphology configurations is correlated with relevant local electronic properties such as edge, surface, and bulk plasmons. Machine learning is deployed to establish that the 2H/3R polytype displays an indirect band gap of (Formula presented.). Further, high resolution electron energy-loss spectroscopy reveals energy-gain peaks exhibiting a gain-to-loss ratio greater than unity, a property that can be exploited for cooling strategies of atomically-thin TMD nanostructures and devices built upon them. The findings of this work represent a stepping stone towards an improved understanding of TMD nanomaterials based on mixed crystalline phases.