Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater
Jianwen Sun (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Teng Zhan (State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences)
Zewen Liu (Tsinghua University)
Junxi Wang (Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting)
Xiaoyan Yi (State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences)
Pasqualina M. Sarro (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science, State Key Laboratory of Solid State Lighting)
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Abstract
A suspended WO3-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO3-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.