Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

Journal article (2019)

Authors

J. Sun Electronic Components, Technology and Materials - EEMCS
Teng Zhan Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting
Zewen Liu Tsinghua University
Junxi Wang State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences
Xiaoyan Yi State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS , State Key Laboratory of Solid State Lighting
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2019 J. Sun, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Pasqualina M Sarro, Kouchi Zhang
DOI: https://doi.org/10.1364/OE.27.036405
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

A suspended WO3-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm illumination at 150 ℃. The measured spectral response of WO3-gate AlGaN/GaN heterostructure shows a high response in deep ultraviolet range. Responsivity at 240 nm wavelength is 4600 A/W at 0.5 V bias. These characteristics support the feasibility of a high accuracy deep UV detector based on the suspended AlGaN/GaN heterostructure integrated with a micro-heater.

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