A CMOS-Compatible Hybrid Plasmonic Slot Waveguide With Enhanced Field Confinement
Jing Xiao (Guilin University of Electronic Technology)
Qi-qin Wei (Guilin University of Electronic Technology)
Daoguo Yang (Guilin University of Electronic Technology)
Ping Zhang (Guilin University of Electronic Technology)
Ning He (Guilin University of Electronic Technology)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
Tianling Ren (Tsinghua University)
XP Chen (Guilin University of Electronic Technology)
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Abstract
The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.