New opportunities with nanowires
Erik P.A.M. M Bakkers (TU Delft - QN/Bakkers Lab, Eindhoven University of Technology)
H. I.T. Hauge (Eindhoven University of Technology)
A. Li (Eindhoven University of Technology)
S. Assali (Eindhoven University of Technology)
A. Dijkstra (Eindhoven University of Technology)
R. Tucker (University of Alberta, Eindhoven University of Technology)
Y. Ren (Eindhoven University of Technology)
S. Conesa Boj (TU Delft - QRD/Kouwenhoven Lab)
M.A. Verheijen (Eindhoven University of Technology, Philips Innovation Services)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.