New opportunities with nanowires
E. P.A.M. Bakkers (TU Delft - QN/Bakkers Lab, Eindhoven University of Technology)
H. I.T. Hauge (Eindhoven University of Technology)
A. Li (Eindhoven University of Technology)
S. Assali (Eindhoven University of Technology)
A. Dijkstra (Eindhoven University of Technology)
R. Tucker (University of Alberta, Eindhoven University of Technology)
Y. Ren (Eindhoven University of Technology)
S. Conesa-Boj (TU Delft - QRD/Kouwenhoven Lab)
M. A. Verheijen (Eindhoven University of Technology, Philips Innovation Services)
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Abstract
Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.