New opportunities with nanowires

Conference paper (2016)

Authors

E.P.A.M. Bakkers QN/Bakkers Lab , Eindhoven University of Technology
H. I.T. Hauge Eindhoven University of Technology
A. Li Eindhoven University of Technology
S Assali Eindhoven University of Technology
A. Dijkstra Eindhoven University of Technology
R. Tucker Eindhoven University of Technology, University of Alberta
Y. Ren Eindhoven University of Technology
S. Conesa Boj QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
M. A. Verheijen Philips Innovation Services, Eindhoven University of Technology
Research Group
QN/Bakkers Lab
Copyright: © 2016 E.P.A.M. Bakkers, H. I.T. Hauge, A. Li, S. Assali, A. Dijkstra, R. Tucker, Y. Ren, S. Conesa Boj, M. A. Verheijen
DOI: https://doi.org/10.1109/PHOSST.2016.7548757
More Info
expand_more

Published Date

22-08-2016

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Bakkers Lab

Abstract

Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.

Files

07548757.pdf
(pdf | 0.84 Mb)