Strong hole-photon coupling in planar Ge for probing charge degree and strongly correlated states
Franco De Palma (École Polytechnique Fédérale de Lausanne)
Fabian Oppliger (École Polytechnique Fédérale de Lausanne)
Wonjin Jang (École Polytechnique Fédérale de Lausanne)
Stefano Bosco (University of Basel, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Bosco Group)
Marián Janík (Institute of Science and Technology Austria)
Stefano Calcaterra (Politecnico di Milano)
Georgios Katsaros (Institute of Science and Technology Austria)
Giovanni Isella (Politecnico di Milano)
Daniel Loss (University of Basel)
Pasquale Scarlino (École Polytechnique Fédérale de Lausanne)
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Abstract
Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as front-runners for future hole-based quantum processors. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in planar Ge, and microwave photons in a high-impedance (Zr = 1.3 kΩ) resonator based on an array of superconducting quantum interference devices (SQUIDs). Our investigation reveals vacuum-Rabi splittings with coupling strengths up to g0/2π = 260 MHz, and a cooperativity of C ~ 100, dependent on DQD tuning. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strong Coulomb correlation effects in Ge QDs. The observed enhanced coherence of the strongly correlated excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors.
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