Studies of the light output properties for a GaN based blue LED using an electro-optical simulation method
Cheng Qian (Changzhou Institute of Technology Research for Solid State Lighting, Chinese Academy of Sciences)
Yun Li (Beijing SSL S&T Promotion Center, Changzhou Institute of Technology Research for Solid State Lighting)
Jiajie Fan (Hohai University, Changzhou Institute of Technology Research for Solid State Lighting)
Xuejun Fan (Lamar University, Changzhou Institute of Technology Research for Solid State Lighting)
Jiajia Fu (Chinese Academy of Sciences)
Lixia Zhao (Chinese Academy of Sciences)
Guoqi Zhang (Changzhou Institute of Technology Research for Solid State Lighting, Chinese Academy of Sciences, TU Delft - Electronic Components, Technology and Materials)
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Abstract
In this study, an electro-optical simulation method is developed to predict the light intensity distribution and luminous flux of an in-house fabricated GaN based blue LED chip. The entire modeling process links an electrical simulation with ANSYS and optical simulation with LightTools, by assuming a proportional relation between the distributed current density and light emission energy on the multiple quantum well (MQW) layer. Experimental results show that the proposed simulation method can give a good prediction on the light intensity distribution for a semi-packaged GaN based blue LED chip. Further analysis on the simulation results reveals that an increase of at most 8% of the luminous flux can be achieved when the current density is controlled to evenly distribute on the MQW layer whereas the chip structure and electro pattern remains the same.
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