Studies of the light output properties for a GaN based blue LED using an electro-optical simulation method

Journal article (2017)

Authors

Cheng Qian Changzhou Institute of Technology Research for Solid State Lighting, Chinese Academy of Sciences
Yun Li Changzhou Institute of Technology Research for Solid State Lighting, Beijing SSL S&T Promotion Center
Jiajie Fan Changzhou Institute of Technology Research for Solid State Lighting, Hohai University
Xuejun Fan Lamar University, Changzhou Institute of Technology Research for Solid State Lighting
Jiajia Fu Chinese Academy of Sciences
Lixia Zhao Chinese Academy of Sciences
Kouchi Zhang Changzhou Institute of Technology Research for Solid State Lighting, Electronic Components, Technology and Materials - EEMCS , Chinese Academy of Sciences
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
GaN Electro-optical simulation LED chip Light intensity distribution
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Published Date

2017

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this study, an electro-optical simulation method is developed to predict the light intensity distribution and luminous flux of an in-house fabricated GaN based blue LED chip. The entire modeling process links an electrical simulation with ANSYS and optical simulation with LightTools, by assuming a proportional relation between the distributed current density and light emission energy on the multiple quantum well (MQW) layer. Experimental results show that the proposed simulation method can give a good prediction on the light intensity distribution for a semi-packaged GaN based blue LED chip. Further analysis on the simulation results reveals that an increase of at most 8% of the luminous flux can be achieved when the current density is controlled to evenly distribute on the MQW layer whereas the chip structure and electro pattern remains the same.