Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method
H. Hong (Tsinghua University, TU Delft - Electronic Components, Technology and Materials)
Jiangtao Wei (Tsinghua University)
Xiaoming Lei (Beihang University)
Haiyun Chen (Beijing Jiaotong University)
Pasqualina M Sarro (TU Delft - Electronic Components, Technology and Materials)
Kouchi Zhang (TU Delft - Electronic Components, Technology and Materials)
Zewen Liu (Tsinghua University)
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Abstract
The application of single-crystal silicon (SCS) nanopore structures in single-molecule-based analytical devices is an emerging approach for the separation and analysis of nanoparticles. The key challenge is to fabricate individual SCS nanopores with precise sizes in a controllable and reproducible way. This paper introduces a fast-stop ionic current-monitored three-step wet etching (TSWE) method for the controllable fabrication of SCS nanopores. Since the nanopore size has a quantitative relationship with the corresponding ionic current, it can be regulated by controlling the ionic current. Thanks to the precise current-monitored and self-stop system, an array of nanoslits with a feature size of only 3 nm was obtained, which is the smallest size ever reported using the TSWE method. Furthermore, by selecting different current jump ratios, individual nanopores of specific sizes were controllably prepared, and the smallest deviation from the theoretical value was 1.4 nm. DNA translocation measurement results revealed that the prepared SCS nanopores possessed the excellent potential to be applied in DNA sequencing. [Figure not available: see fulltext.]
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