Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices

Journal article (2008)

Authors

C Buizert QN/Quantum Transport
FHL Koppens QN/Quantum Transport
M Pioro-Ladrière External organisation
HP Tranitz External organisation
IT Vink QN/Quantum Transport
S Tarucha QN/Theoretical Physics
W. Wegscheider External organisation
L.M.K. Vandersypen QN/Quantum Transport
Research Group
QN/Quantum Transport
More Info
expand_more

Published Date

2008

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Quantum Transport