Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices
Journal Article
(2008)
Author(s)
C Buizert (TU Delft - QN/Quantum Transport)
FHL Koppens (TU Delft - QN/Quantum Transport)
M Pioro-Ladrière (External organisation)
HP Tranitz (External organisation)
IT Vink (TU Delft - QN/Quantum Transport)
S Tarucha (TU Delft - QN/Theoretical Physics)
W Wegscheider (External organisation)
Lieven M.K. Vandersypen (TU Delft - QN/Quantum Transport)
Research Group
QN/Quantum Transport
To reference this document use:
https://resolver.tudelft.nl/uuid:186b9a90-2771-41a4-a846-b14546b86d99
More Info
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Publication Year
2008
Research Group
QN/Quantum Transport
Volume number
101
Pages (from-to)
226603-1-226603-4
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