Platinum contacts for 9-atom-wide armchair graphene nanoribbons
Chunwei Hsu (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)
Michael Rohde (Kavli institute of nanoscience Delft, Student TU Delft)
Gabriela Borin Barin (Swiss Federal Laboratories for Materials Science and Technology (Empa))
Guido Gandus (Swiss Federal Laboratories for Materials Science and Technology (Empa), ETH Zürich)
Daniele Passerone (Swiss Federal Laboratories for Materials Science and Technology (Empa))
Mathieu Luisier (ETH Zürich)
Pascal Ruffieux (Swiss Federal Laboratories for Materials Science and Technology (Empa))
Roman Fasel (Swiss Federal Laboratories for Materials Science and Technology (Empa))
Herre S.J. van der Zant (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)
Maria El Abbassi (TU Delft - QN/van der Zant Lab, Kavli institute of nanoscience Delft)
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Abstract
Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a long-standing challenge in searching for the next GNR-based nanoelectronics. This quest requires the controlled fabrication of sub-20 nm metallic gaps, a clean GNR transfer minimizing damage and organic contamination during the device fabrication, as well as work function matching to minimize the contact resistance. Here, we transfer 9-atom-wide armchair-edged GNRs (9-AGNRs) grown on Au(111)/mica substrates to pre-patterned platinum electrodes, yielding polymer-free 9-AGNR field-effect transistor devices. Our devices have a resistance in the range of 106-108 Ω in the low-bias regime, which is 2-4 orders of magnitude lower than previous reports. Density functional theory calculations combined with the non-equilibrium Green's function method explain the observed p-type electrical characteristics and further demonstrate that platinum gives strong coupling and higher transmission in comparison to other materials, such as graphene.