High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Journal Article
(2015)
Authors
N Golshani (TU Delft - Electronic Components, Technology and Materials)
J Derakhshandeh (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
R Ishihara (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1016/j.sse.2014.11.022
TU Delft Repository resolver:
https://resolver.tudelft.nl/1ca649b6-5984-46cc-a98f-a9a237e7430e
More Info
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Publication Year
2015
Language
English
Related content
Research Group
Electronic Components, Technology and Materials
Volume number
105
Pages (from-to)
6-11
DOI:
https://doi.org/10.1016/j.sse.2014.11.022
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