High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

Journal article (2015)

Authors

N. Golshani Electronic Components, Technology and Materials - EEMCS
J. Derakhshandeh Kheljani Electronic Components, Technology and Materials - EEMCS
C.I.M. Beenakker Electrical Engineering, Mathematics and Computer Science
R. Ishihara Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2015

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials