Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
A. Holovchenko (TU Delft - QN/van der Zant Lab)
J. Dugay (TU Delft - QN/van der Zant Lab)
Mónica Giménez-Marqués (Universitat de València)
Ramón Torres-Cavanillas (Universitat de València)
Eugenio Coronado (Universitat de València)
H.S.J. van der Zant (TU Delft - QN/van der Zant Lab)
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Abstract
The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
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