A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

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A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

Conference Paper (2018)

Author(s)

Nandish Mehta (University of California)

Johan Huijsing (TU Delft - Electronic Instrumentation)

Vladimir Stojanović (University of California)

Research Group

Electronic Instrumentation

Topology Damping Linearity Bandwidth Distortion Capacitors Voltage measurement

DOI related publication

https://doi.org/10.1109/VLSIC.2018.8502397 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:2143b126-383c-4c04-9065-42c2a17f3dd2

More Info

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Publication Year

2018

Language

English

Research Group

Electronic Instrumentation

Volume number

2018-June

Article number

8502397

Pages (from-to)

235-236

ISBN (electronic)

978-1-5386-4214-6

Event

2018 Symposia on VLSI Technology and Circuits (2018-06-18 - 2018-06-22), Hilton Hawaiian Village, Honolulu, United States

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165

Abstract

This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).