Energy dissipation in silicon nitride microbeam resonators with a 3D-printed polymer layer
L. Crocetto (TU Delft - Electronic Instrumentation)
Tomas Manzaneque (TU Delft - Electronic Instrumentation)
Murali K. Krishna Ghatkesar (TU Delft - Micro and Nano Engineering)
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Abstract
We present an analysis of the main mechanisms of dissipation of resonant multilayer double-clamped microbeams in the frequency range 200 to 500 kHz. The devices consist of 2μm thick silicon nitride (E ≈ 160 GPa) beams covered with a polymer IP-Dip (E ≈ 4 GPa) layer fabricated by two-photon polymerization. A laser-Doppler vibrometer was used to measure the resonant vibrations and energy dissipation of the devices in high vacuum (< 0.05 Pa) at room temperature. The experimental findings were compared with theoretical and finite element method (FEM) results. The quality factor, dominated by the intrinsic dissipation in the IP-Dip layer, has proven to have a strong dependence on polymer thickness. On this basis, a viscous model for intrinsic dissipation in a polymer layer was formulated.
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