A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

Conference Paper (2016)
Author(s)

Eduard Satoshi Malotaux (TU Delft - Electronics)

M. Spirito (TU Delft - Electronics)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/BCTM.2016.7738949
More Info
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Publication Year
2016
Language
English
Research Group
Electronics
Pages (from-to)
118-121
ISBN (electronic)
978-1-5090-0484-3

Abstract

In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.

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