EM
E.S. Malotaux
Authored
19 records found
This article presents the development of a focal plane array (FPA) for terahertz imaging applications with a near diffraction-limited resolution achieved through a very tight sampling of the focal plane. The antenna array is integrated with direct detectors in a 22-nm CMOS techno
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A complete system modeling and characterization of a wideband differential terahertz (THz) direct detector, integrated in a commercial CMOS technology, is presented. The detector consists of a recently developed double leaky-slot lens antenna that operates from 200 to 600 GHz in
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The optical performance of a wideband double bowtie slot antenna, implemented in 28nm CMOS technology, is evaluated. The antenna serves as a verification antenna for an uncooled single-pixel radiometer operating from 200 GHz to 600 GHz. The performance is evaluated in terms of ra
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The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the anten
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The design and performance of two wideband double leaky slot lens antennas, suitable for integration in commercial CMOS technologies, are presented in this article. It is shown that antennas that are of leaky-wave nature are extremely suitable for CMOS integration as the impact o
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The design and performance of two wideband double leaky slot lens antennas, suitable for integration in commercial CMOS technologies, are presented in this article. It is shown that antennas that are of leaky-wave nature are extremely suitable for CMOS integration as the impact o
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In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61
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In this contribution we present a method for estimating linearity performance of devices operating in the higher millimeter-wave region, under modulated signals and over different loading conditions. The proposed method uses the power dependent vector gain extracted during contin
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In this contribution we present a method for estimating linearity performance of devices operating in the higher millimeter-wave region, under modulated signals and over different loading conditions. The proposed method uses the power dependent vector gain extracted during contin
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In this paper we present a method to alleviate the errors introduced by the bias dependency of the electrostatic discharge or antenna-effect protection diodes when a direct metal-one TRL calibration is employed. The proposed method shows that the two error-boxes produced by the T
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In this paper we present a method to alleviate the errors introduced by the bias dependency of the electrostatic discharge or antenna-effect protection diodes when a direct metal-one TRL calibration is employed. The proposed method shows that the two error-boxes produced by the T
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A linearization technique for bipolar amplifiers based on Derivative
Superposition is presented. The proposed technique provides excellent
linearity, while having low sensitivity on the bias conditions. A
demonstrator circuit, along with a reference circuit using out-of-band
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A linearization technique for bipolar amplifiers based on Derivative
Superposition is presented. The proposed technique provides excellent
linearity, while having low sensitivity on the bias conditions. A
demonstrator circuit, along with a reference circuit using out-of-band
...
In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GH
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In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GH
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In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GH
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In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power
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A 12-pixel THz Focal Plane Array (FPA), integrated in Global Foundries 22nm CMOS technology, enabling high resolution passive THz imaging, is presented. The array efficiently couples blackbody radiation from 200 GHz to 600 GHz to Schottky Barrier Diodes (SBDs) in a differential t
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In this contribution we will present the diffraction-limited imaging capabilities of a focal plane array (FPA) of antenna-coupled direct-detectors at submillimeter wavelengths. The FPA prototype is a tightly sampled, 12-pixel array that was developed in a 22 nm CMOS technology an
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Contributed
1 records found
In recent years, the demand for the wireless connectivity is increasing and leads to the research into the above 100GHz design. Developments have been made with the circuit and technologies to make the circuit operate at 100GHz. The current availability of silicon-based technolog
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