Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

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Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

Conference Paper (2016)

Author(s)

E. S. Malotaux (TU Delft - Electrical Engineering, Mathematics and Computer Science)

M. Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group

Electronics

Millimeter-wave SiGe BiCMOS Flicker noise Poly-silicon resistor Square law detector 1/f-noise

DOI related publication

https://doi.org/10.1109/mwsym.2016.7539967 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:981a9189-87cf-40de-a5e2-e25c50cae387

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Publication Year

2016

Language

English

Research Group

Electronics

Pages (from-to)

1-4

ISBN (electronic)

978-1-5090-0698-4

Event

IEEE MTT-S International Microwave Symposium (IMS) 2016 (2016-05-22 - 2016-05-27), San Francisco, United States

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144

Abstract

In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power (NEP) by optimizing both the bias and the poly-silicon load resistor. Moreover, broadband characterization of un-matched power detectors are performed to present responsivity and NEP data for multi-octave bandwidth from 1-67 GHz. The NEP of the realized detectors is less than 15 pW/√Hz over the entire characterization band, and given a 1 kHz modulated RF input power, the NEP of the realized detectors at 63 GHz is 2.6 pW/√Hz and 4.4 pW/√Hz for the CB- and CE-detector respectively.