This work presents a chessboard focal plane array (FPA) camera with state-of-the-art thermal and spatial resolution in the 200 600 GHz frequency range. The FPA is implemented in a 130-nm SiGe BiCMOS technology, where each antenna element is loaded with a direct detector based on heterojunction bipolar transistors (HBTs). The antenna and detector architecture, including the vias and biasing network, were optimized to achieve a noise-equivalent power (NEP) suitable for passive THz imaging. Overall, the estimated loss of the FPA is better than 4 dB between 350 and 600 GHz, of which 1.5 dB is due to ohmic losses in the FPA, 1 dB to mutual coupling between detectors, and 0.7 dB to the impedance mismatch between the detector and antenna. A prototype of 24 pixels was manufactured and mounted on the base of a silicon hyperhemispherical lens with an anti-reflection coating. Excellent spatial resolution is achieved through a tight element spacing in the fabricated FPA, which is only half the wavelength in silicon at 350 GHz and therefore consistent with the state-of-the-art. Its responsivity, noise, and radiation patterns were characterized using a quasi-optical measurement setup. The measured radiation patterns are within 1 dB of simulations, demonstrating that the integrated THz camera achieves excellent spatial resolution. Between 330 GHz and 500 GHz, the NEP was measured to be on the order of 10 pW/vHz. When considering the entire operational band, this NEP results in a noise-equivalent temperature difference (NETD) of the camera is 1.6 K for an integration time of 1 s per pixel, which is comparable to the state-of-the-art. While THz detectors with state-of-the-art sensitivity are limited to single-pixel designs, the presented work combines a multi-pixel implementation with competitive sensitivity.

This work presents a modified Marchand balun for sub-terahertz frequencies. By introducing an asymmetric ground shield in the coupler sections, low imbalance is achieved at the differential port. The proposed design is well-suited for on-wafer testing of differential power amplifiers and antennas. A prototype fabricated in a 90-nm SiGe-BiCMOS process is characterized in the 200–325 GHz range, showing good agreement with simulations. The measured amplitude and phase imbalances at 270 GHz are 0.1 dB and 2.5°, remaining lower than ±1 dB and 3.5° in the 240–290 GHz frequency range. The measured insertion loss is below 2.5 dB, while the simulated return loss in the single-ended port is better than 10 dB in the 220–340 GHz range.

This contribution presents the assessment of RDL technology at sub-terahertz frequencies based on polybenzoxazole (PBO) polymers. A stack of two PBO layers of 10μm thickness with 3 metallization of 5μm copper is being under development. Vias as small as 10μm and a separation of 60μm are being explored. To assess the materials and capabilities of this technology, GCPW, stripline transmission line structures are being assessed, expecting losses in the order of 1.3dB/mm and 2.1dB/mm respectively. Moreover, two resonators have been designed to enhance the accuracy of the characterization.

This contribution presents a silicon-integrated focal plane array (FPA) THz camera that achieves passive-level sensitivity and a densely sampled field-of-view. The FPA chip is designed in a 130nm SiGe BiCMOS technology from IHP and consists of a previously presented chessboard array topology with integrated direct detectors. The detectors are realized using a differential pair of heterojunction bipolar transistors in a common-base configuration biased in deep saturation. A silicon, hyper-hemispherical lens is mounted on the chip as a primary focusing element. The maximum responsivity of the camera is simulated to be 680 V/W at 350GHz, and above half this value between 260GHz and 600GHz. Simulations show that the minimum NEP is on the order of 2pW/√HZ, yielding an NETD of 1K for a 150ms integration time. For characterization and future imaging demonstrations, the camera is mounted in a quasi-optical setup, which refocuses the beams from the silicon lens onto an imaging plane. Measurements performed in this setup demonstrate that the camera achieves a responsivity on the order of 550/W, while also realizing a dense focal plane sampling.

Radiative near-field links have gained noticeable interests recently for high-data-rate wireless communication. Unlike far-field links, near-field links can have negligible path loss within hundreds of meters for electrically large antennas at high frequencies. In this work, we propose a multi-lens quasi-optical (QO) system for 100-m near-field backhaul communication at H-band. The QO system is designed with compact size (aspect ratio of 1.3:1) and high coupling efficiency of 82%. Moreover, the rotation of an auxiliary lens realizes beam scanning for the link alignment. The scan range is in the order of 1 m with less than 2 dB scanning coupling loss and scanning magnification of 14.5:1.

This work presents an electrically-small lens that has been redesigned towards a flat interface. This way, the lens is easier to integrated, compared to an earlier introduced spherical core-shell lens concept. The lens is created from a single dielectric host material by conformally machining holes into the material. In this process, two artificial dielectric layers are created; The first layer is used for anti-reflection purposes, whereas the second is used to convert the spherical interface to a flat interface. The two layers enable the use of holes with lower aspect ratio drilling, compared to classical gradient-index lenses. The lens is designed to operate in the 140-170 GHz bandwidth, and a prototype with height of only 2.2 mm and diameter of 6.6 mm was fabricated and characterize. The prototype is small enough to fit in many integrated circuit packages. The flat lens was compared to a non-flat core lens in terms of pattern quality, return loss and dielectric loss, with only negligible performance degradation.

In this contribution, we describe a reconfigurable surface, designed in 130um SiGe technology, to realize a fully-electronic, planar chopper aiming at passive terahertz imaging applications. This surface consists of subwavelength metallic patches that are interconnected using FET-based varactors. By switching the bias voltage of the varactors between 0V and 1.2V, the reconfigurable surface can switch between a transmissive and opaque state, respectively. The expected transmissivity is simulated to be between 0.2 and 0.9 over a wide frequency band, from 250 GHz to 550 GHz. This chopping solution would enable a high degree of system integration for future passive terahertz cameras.

This article presents the development of a focal plane array (FPA) for terahertz imaging applications with a near diffraction-limited resolution achieved through a very tight sampling of the focal plane. The antenna array is integrated with direct detectors in a 22-nm CMOS technology and operates from 200 to 600 GHz. The tight sampling of the focal plane is realized by using a combination of leaky-wave radiation and a dual-polarized connected array configuration that closely resembles a chessboard. By utilizing both the polarizations in the chessboard design, the number of array elements per unit area is effectively doubled. The geometry of the chessboard array was co-optimized together with that of a silicon elliptical lens to achieve both high aperture efficiency and beam overlap. Measurements in the WR2.2 band of a fabricated demonstrator showed that an aperture efficiency of −4.1 dB was realized at 400 GHz. The average gain roll-off between two diagonally adjacent array elements was measured to be −1.5 dB at 400 GHz. Compared to the reference configuration of an idealized, equivalently sampled hexagonal FPA, the improvement in gain at the edge of coverage yields 1.2 dB, which includes 1.9 dB of ohmic losses in the chessboard array. The agreement between measurements and simulations proved to be within 1 dB from 325 to 475 GHz.