J. Bueno Lopez
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38 records found
1
This work presents an electrically-small lens that has been redesigned towards a flat interface. This way, the lens is easier to integrated, compared to an earlier introduced spherical core-shell lens concept. The lens is created from a single dielectric host material by conformally machining holes into the material. In this process, two artificial dielectric layers are created; The first layer is used for anti-reflection purposes, whereas the second is used to convert the spherical interface to a flat interface. The two layers enable the use of holes with lower aspect ratio drilling, compared to classical gradient-index lenses. The lens is designed to operate in the 140-170 GHz bandwidth, and a prototype with height of only 2.2 mm and diameter of 6.6 mm was fabricated and characterize. The prototype is small enough to fit in many integrated circuit packages. The flat lens was compared to a non-flat core lens in terms of pattern quality, return loss and dielectric loss, with only negligible performance degradation.
The presence of quasiparticles typically degrades the performance of superconducting microwave circuits. The readout signal can generate nonequilibrium quasiparticles, which lead to excess microwave loss and decoherence. To understand this effect quantitatively, we measure quasiparticle fluctuations and extract the quasiparticle density across different temperatures, readout powers, and resonator volumes. We find that microwave power generates a higher quasiparticle density as the active resonator volume is reduced and show that this effect sets a sensitivity limit on kinetic inductance detectors. We compare our results with theoretical models of direct microwave photon absorption by quasiparticles and conclude that an unknown, indirect mechanism plays a dominant role in quasiparticle generation. These results provide a route to mitigate quasiparticle generation due to readout power in superconducting devices.
The thermal energy radiated by silicon wafers with different conductivities is characterized experimentally in the mm and sub-mm wave ranges. These samples are heated up, and the energy that they radiate thermally is captured by different horn antennas covering the frequency band between 75 and 500 GHz. The energy radiated (in the order of pW) and collected by the horn antennas is subsequently detected by zero bias Schottky diodes. The measured thermal radiated power agrees with the prediction from Planck's law for the highly doped wafers, corresponding to high conductivities. However, for low conductivities, the measurements show a descending pattern as a function of the frequency, which is not in line with expectations from Planck's law. Parallelly, we have developed a theoretical model providing a classical explanation of these results [1].
Photoconductive antennas (PCAs) are promising candidates for sensing and imaging applications. In recent years, our group has investigated their properties under pulsed laser illumination in transmission using a time-domain (TD) Norton equivalent circuit. Here, we extend this analysis to the link between a photoconductive source and a receiver introducing for the latter a second TD Norton equivalent circuit. We also evaluate the transfer function of a dispersive quasi-optical (QO) link. Specifically, a field correlation approach based on the high-frequency techniques is used to evaluate the spectral transfer function between two bow-tie-based PCAs, including the QO link. The detected currents in the receiving circuit are reconstructed using stroboscopic sampling of the modeled THz pulses, equivalent to what is actually performed by THz TD systems. Both the amplitude and the waveforms of these currents are evaluated. The QO link is then experimentally characterized to validate the proposed methodology. The comparison between the simulations and the measurements is excellent.
The developed hardware employs a cascade of two (COTS) programmable gain amplifier (PGA), capable of reaching up to 90 dB gain (volt to volt), each providing an input referred noise level of 16 nV/√Hz. The signal is then digitized on the same board via a 500 kHz 12bit ADC, providing an SNR of 74 dB. The digitized signal is then readout via an ST microcontroller and transferred to the operator PC via a USB interface. The sensitive bias voltages for the PGAs are provided via the microcontroller, or alternatively can be fed by an external lab grade supply to further improve on the (already high) supply noise rejection from the first stage PGA. The proposed hardware is designed to interface with VDI zero bias detectors, high responsivity and low NEP diodes (around 2000 V/W and below 12 pW/√Hz, respectively) operating in monomodal waveguide bands up to 500 GHz. In this contribution we demonstrate the usage of the developed hardware with WR10, WR6.5, WR5 and WR 3 ZBD diodes. ...
The developed hardware employs a cascade of two (COTS) programmable gain amplifier (PGA), capable of reaching up to 90 dB gain (volt to volt), each providing an input referred noise level of 16 nV/√Hz. The signal is then digitized on the same board via a 500 kHz 12bit ADC, providing an SNR of 74 dB. The digitized signal is then readout via an ST microcontroller and transferred to the operator PC via a USB interface. The sensitive bias voltages for the PGAs are provided via the microcontroller, or alternatively can be fed by an external lab grade supply to further improve on the (already high) supply noise rejection from the first stage PGA. The proposed hardware is designed to interface with VDI zero bias detectors, high responsivity and low NEP diodes (around 2000 V/W and below 12 pW/√Hz, respectively) operating in monomodal waveguide bands up to 500 GHz. In this contribution we demonstrate the usage of the developed hardware with WR10, WR6.5, WR5 and WR 3 ZBD diodes.
Time-Domain Modelling of Pulsed Photoconducting Sources - Part II
Characterization of an LT GaAs Bow-Tie Antenna
Drude's description of the response of low-temperature gallium arsenide to optical pulse excitation is used to evaluate the components of a time-domain Norton equivalent circuit of a photoconductive antenna (PCA) source. The saturation of the terahertz (THz) radiated power occurring at large optical excitation levels was previously associated by the scientific community to radiation and charge screening of the bias. With the present circuit, we are able to model accurately the measured saturation as only due to the EM feedback from the antenna to the bias. The predicted THz radiated power is shown to match very accurately the measurements when the circuit is combined with an accurate description of the experimental conditions and the modeling of the THz quasi-optical (QO) channel.
State-of-the-art THz pulsed commercial systems operating over large bandwidth suffer from high dispersion or low radiation efficiency due to the poor coupling between the transmitter and receiver photoconductive antennas (PCAs). In this work, we present the fabrication and characterization of a leaky-lens PCA that has the potential to solve this problem. The presented PCA is based on a low-temperature grown gallium arsenide (LT-GaAs) membrane with a 1:15 bandwidth coverage (0.1-1.5 THz), where the frequency response is constant. In order to fabricate the PCA on an LT-GaAs membrane, a novel fabrication process is developed. This process is dramatically faster than previously used processes (∼1.5 h instead of ∼20 h). Furthermore, an experimental validation of the radiated power together with the comparison to a standard bow-tie-based PCA fabricated on the same LT-GaAs wafer is shown in this article. We show that the PCA source on the LT-GaAs membrane is more efficient due to the enhanced leaky wave radiation. The leaky-lens PCA stands out as a great candidate to improve the coupling efficiency in THz pulsed commercial systems, where the maximum laser power that can be used is limited by the dispersion in the optic fiber.
We present the design, fabrication and characterization of a broadband lossless matching layer for silicon lens arrays. The proposed matching layer is based on silicon frusta (truncated pyramids) on top of the lens array fabricated by means of laser ablation. This matching layer is advantageous over quarter-wavelength dielectric matching layers since it covers more than an octave of bandwidth. We compare the performance of this matching layer with the commonly-used parylene-C matching layer at the center of the targetted band (500 GHz) in a lens-antenna integrated system. We measure a 1.6 dB higher transmission of the proposed silicon frusta matching compared to the parylene-C matching layer.
DESHIMA 2.0
Development of an Integrated Superconducting Spectrometer for Science-Grade Astronomical Observations
Integrated superconducting spectrometer (ISS) technology will enable ultra-wideband, integral-field spectroscopy for (sub)millimeter-wave astronomy, in particular, for uncovering the dust-obscured cosmic star formation and galaxy evolution over cosmic time. Here, we present the development of DESHIMA 2.0, an ISS for ultra-wideband spectroscopy toward high-redshift galaxies. DESHIMA 2.0 is designed to observe the 220–440 GHz band in a single shot, corresponding to a redshift range of z = 3.3–7.6 for the ionized carbon emission ([C II] 158 μ m). The first-light experiment of DESHIMA 1.0, using the 332–377 GHz band, has shown an excellent agreement among the on-sky measurements, the laboratory measurements, and the design. As a successor to DESHIMA 1.0, we plan the commissioning and the scientific observation campaign of DESHIMA 2.0 on the ASTE 10-m telescope in 2023. Ongoing upgrades for the full octave-bandwidth system include the wideband 347-channel chip design and the wideband quasi-optical system. For efficient measurements, we also develop the observation strategy using the mechanical fast sky-position chopper and the sky-noise removal technique based on a novel data-scientific approach. In the paper, we show the recent status of the upgrades and the plans for the scientific observation campaign.