Vignesh Murugesan
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24 records found
1
Geometry dependence of two-level-system noise and loss in a - Si C
H parallel-plate capacitors for superconducting microwave resonators
Parallel-plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single-photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling two-level systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency noise level depends on the PPC's dimensions has not been experimentally addressed. We measure the frequency noise of 56 resonators with a-SiC:H PPCs, which cover a factor of 44 in PPC area and a factor of 4 in dielectric thickness. To support the noise analysis, we measure the resonators' TLS-induced power-dependent intrinsic loss and temperature-dependent resonance frequency shift. From the TLS models, we expect a geometry-independent microwave loss and resonance frequency shift, which is set by the TLS properties of the dielectric. However, we observe a thickness-dependent microwave loss and resonance frequency shift; this is explained by surface layers that limit the performance of PPC-based resonators. For a uniform dielectric, the frequency noise level should scale directly inversely with the PPC area and thickness. We observe that an increase in PPC size reduces the frequency noise, but the exact scaling is, in some cases, weaker than expected. Finally, we derive engineering guidelines for the design of KIDs based on PPC-based resonators.
We present a "mix-and-match"process to create large structures with submicrometer features by combining UV contact lithography and 100 kV electron-beam lithography in a single layer of negative-tone resist: Micro-Resist-Technology ma-N1405. The resist is successfully applied for the fabrication of an on-chip terahertz spectrometer, where the design requires 450 nm wide lines and 300 nm wide trenches in a 150 nm thick niobium-titanium-nitride layer, tolerating errors of ± 30 nm. We use a resist thickness of 500 nm, optimized to allow reliable SF 6/O 2-based reactive ion etching of structures with 30 nm accuracy. We find that resist requires an electron-beam cross-linking dose of 1100 μ C / c m 2 for an acceleration voltage of 100 kV in combination with a 180 s 100 °C bake on a hot plate and 45 s development. The smallest resist bars made with our dedicated recipe are 100 nm wide, with the smallest gaps about 300 nm. The difference between the designed and realized feature size is between 2 and 30 nm for structures up to 700 nm wide. The optical exposure dose is 300 m J / c m 2 for the same development time and is optimized to produce a positive sloped edge profile allowing good step coverage for subsequent layers. The resist can be applied, shipped, and processed in a time span of a couple of days without notable deterioration of patterning quality.
Aims. Future actively cooled space-borne observatories for the far-infrared, loosely defined as a 1-10 THz band, can potentially reach a sensitivity limited only by background radiation from the Universe. This will result in an increase in observing speed of many orders of magnitude. A spectroscopic instrument on such an observatory requires large arrays of detectors with a sensitivity expressed as a noise equivalent power NEP = 3 × 10-20 W√ p Hz. Methods. We present the design, fabrication, and characterisation of microwave kinetic inductance detectors (MKIDs) for this frequency range reaching the required sensitivity. The devices are based on thin-film NbTiN resonators which use lens-antenna coupling to a submicron-width aluminium transmission line at the shorted end of the resonator where the radiation is absorbed. We optimised the MKID geometry for a low NEP by using a small aluminium volume of ≈1 μm3 and fabricating the aluminium section on a very thin (100 nm) SiN membrane. Both methods of optimisation also reduce the effect of excess noise by increasing the responsivity of the device, which is further increased by reducing the parasitic geometrical inductance of the resonator. Results. We measure the sensitivity of eight MKIDs with respect to the power absorbed in the detector using a thermal calibration source filtered in a narrow band around 1.5 THz. We obtain a NEPexp(Pabs) = 3:1 ± 0:9 × 10-20 W√ p Hz at a modulation frequency of 200 Hz averaged over all measured MKIDs. The NEP is limited by quasiparticle trapping. Conclusions. The measured sensitivity is sufficient for spectroscopic observations from future, actively cooled space-based observatories. Moreover, the presented device design and assembly can be adapted for frequencies up to ≈10 THz and can be readily implemented in kilopixel arrays.
Low-loss a-SiC
H for superconducting microstrip lines for (sub-)millimeter astronomy
Hydrogenated Amorphous Silicon Carbide
A Low-Loss Deposited Dielectric for Microwave to Submillimeter-Wave Superconducting Circuits
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits, and kinetic inductance parametric amplifiers. Compared with planar structures, multilayer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multilayer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measure the subkelvin and low-power microwave and millimeter-submillimeter-wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using superconducting chips with Nb-Ti-N/a-SiC:H/Nb-Ti-N microstrip resonators. We deposit the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a millimeter-submillimeter loss tangent ranging from 0.9×10-4 at 270 GHz to 1.5×10-4 at 385 GHz. The microwave loss tangent is 3.1×10-5. These are the lowest low-power subkelvin loss tangents that have been reported for microstrip resonators at millimeter-submillimeter and microwave frequencies. The a-SiC:H films are free of blisters and have low stress: -20 MPa compressive at 200-nm thickness to 60 MPa tensile at 1000-nm thickness.
We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and submillimeter wavelengths. The microstrips are fabricated from Nb-Ti-N, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Submillimeter wave losses are measured using on-chip Fabry-Perot resonators (FPRs) operating around 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tanδ=3.7±0.5×10-5 at approximately 6GHz and tanδ=2.1±0.1×10-4 at 350 GHz. These results represent very low losses for deposited dielectrics, but the submillimeter wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.
A superconducting on-chip microstrip filter bank spectrometer prototype for Far-Infrared (FIR) Astronomy is presented. The measurements showcase its capabilities towards moderate spectral resolution (f/\Delta f\sim 500) broadband FIR spectroscopy. In this sub-mm-wave filter bank, each spectral channel consists of an 'I-shaped' microstrip THz bandpass filter that couples the radiation to a Microwave Kinetic Inductance Detector (MKID) for a background limited detection and a scalable frequency-multiplexed microwave readout.
Wide Band Quasi-Optical System for DESHIMA 2.0 Spectrometer
Beam Pattern Experimental Validation
DESHIMA 2.0 is a spectrometer for astronomical applications targeting sources at sub-mm wavelengths from 240GHz to 720GHz. The design for its wide band Quasi-Optical system was presented in the previous works. In this work, the experimental validation of the beam pattern of the system at the lower end of its frequency band is presented. The measurement for the complete frequency band of the system is ongoing and will be presented at the conference.
For space observatories, the glitches caused by high energy phonons created by the interaction of cosmic ray particles with a detector substrate lead to dead time during observation. Mitigating the impact of cosmic rays is therefore an important requirement for detectors to be used in future space missions. In order to investigate possible solutions, we carry out a systematic study by testing four large arrays of Microwave Kinetic Inductance Detectors (MKIDs), each consisting of ∼960 pixels and fabricated on monolithic 55 mm × 55 mm × 0.35 mm Si substrates. We compare the response to cosmic ray interactions in our laboratory for different detector arrays: A standard array with only the MKID array as reference, an array with a low Tc superconducting film as a phonon absorber on the opposite side of the substrate, and arrays with MKIDs on membranes. The idea is that the low Tc layer down converts the phonon energy to values below the pair breaking threshold of the MKIDs, and the membranes isolate the sensitive part of the MKIDs from phonons created in the substrate. We find that the dead time can be reduced up to a factor of 40 when compared to the reference array. Simulations show that the dead time can be reduced to below 1% for the tested detector arrays when operated in a spacecraft in an L2 or a similar far-Earth orbit. The technique described here is also applicable and important for large superconducting qubit arrays for future quantum computers.
Next generation sub-mm imaging instruments require kilo-pixel focal plane arrays filled with background limited detectors. Microwave kinetic inductance detectors (MKIDs) are a state-of-the-art detector for future instruments due to their inherent multiplexing capabilities. An MKID consists of a superconducting resonator coupled to a feed-line that is used for readout. In the device presented here radiation coupling is achieved by coupling the MKID directly to a planar antenna. The antenna is placed in the focus of an extended hemispherical lens to increase the filling factor and to match efficiently to fore optics. In this paper, we present the design and the optical performance of MKIDs optimized for operation in a 100-GHz band around 850 GHz. We have measured the coupling efficiency, frequency response, and beam patterns and compare those results to simulated performance. We obtain an excellent agreement between the measured and simulated beam pattern, frequency response, and absolute coupling efficiency between a thermal calibration source and the power absorbed in the detector. Additionally, we demonstrate that antenna coupled MKIDs offer background limited radiation detection down to ∼100 aW of power absorbed in the detector.
We present the development of a background-limited kilo-pixel imaging array of ultrawide bandwidth kinetic inductance detectors (KIDs) suitable for space-based THz astronomy applications. The array consists of 989 KIDs, in which the radiation is coupled to each KID via a leaky lens antenna, covering the frequency range between 1.4 and 2.8 THz. The single pixel performance is fully characterised using a representative small array in terms of sensitivity, optical efficiency, beam pattern and frequency response, matching very well its expected performance. The kilo-pixel array is characterised electrically, finding a yield larger than 90% and an averaged noise-equivalent power lower than 3 × 10- 19 W/Hz1 / 2. The interaction between the kilo-pixel array and cosmic rays is studied, with an expected dead time lower than 0.6% when operated in an L2 or a similar far-Earth orbit.
We present the design, fabrication, and full characterisation (sensitivity, beam pattern, and frequency response) of a background limited broadband antenna coupled kinetic inductance detector covering the frequency range from 1.4 to 2.8 THz. This device shows photon noise limited performance with a noise equivalent power of 2.5 × 10-19W/Hz1/2 at 1.55 THz and can be easily scaled to a kilo-pixel array. The measured optical efficiency, beam pattern, and antenna frequency response match very well the simulations.