Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.

Disordered superconductors offer new impedance regimes for quantum circuits, enable a pathway to protected qubits, and can improve superconducting detectors due to their high kinetic inductance and sheet resistance. The performance of these devices can be limited, however, by quasiparticles—the fundamental excitations of a superconductor. While experiments have shown that disorder affects the relaxation of quasiparticles drastically, the microscopic mechanisms are still not understood. We address this issue by measuring quasiparticle relaxation in a disordered β-Ta film, which we pattern as the inductor of a microwave resonator. We observe that quasiparticle recombination is governed by the phonon scattering time, which is faster than conventional recombination in ordered superconductors. We interpret the results as recombination of localized quasiparticles, induced by disorder, which first delocalize via phonon absorption. We analyze quasiparticle relaxation measurements on superconductors with different degrees of disorder and conclude that this phenomenon is inherent to disordered superconductors.

Parallel-plate capacitors (PPC) significantly reduce the size of superconducting microwave resonators, reducing the pixel pitch for arrays of single-photon energy-resolving kinetic inductance detectors (KIDs). The frequency noise of KIDs is typically limited by tunneling two-level systems (TLS), which originate from lattice defects in the dielectric materials required for PPCs. How the frequency noise level depends on the PPC's dimensions has not been experimentally addressed. We measure the frequency noise of 56 resonators with a-SiC:H PPCs, which cover a factor of 44 in PPC area and a factor of 4 in dielectric thickness. To support the noise analysis, we measure the resonators' TLS-induced power-dependent intrinsic loss and temperature-dependent resonance frequency shift. From the TLS models, we expect a geometry-independent microwave loss and resonance frequency shift, which is set by the TLS properties of the dielectric. However, we observe a thickness-dependent microwave loss and resonance frequency shift; this is explained by surface layers that limit the performance of PPC-based resonators. For a uniform dielectric, the frequency noise level should scale directly inversely with the PPC area and thickness. We observe that an increase in PPC size reduces the frequency noise, but the exact scaling is, in some cases, weaker than expected. Finally, we derive engineering guidelines for the design of KIDs based on PPC-based resonators.

Kinetic inductance detectors (KIDs) are superconducting energy-resolving detectors, sensitive to single photons from the near-infrared to ultraviolet. We study a hybrid KID design consisting of a β-phase tantalum (β-Ta) inductor and a Nb-Ti-N interdigitated capacitor. The devices show an average intrinsic quality factor Qi of 4.3×105±1.3×105. To increase the power captured by the light-sensitive inductor, we 3D print an array of 150×150μm resin microlenses on the backside of the sapphire substrate. The shape deviation between design and printed lenses is smaller than 1μm, and the alignment accuracy of this process is δx=+5.8±0.5μm and δy=+8.3±3.3μm. We measure a resolving power for 1545-402 nm that is limited to 4.9 by saturation in the KID's phase response. We can model the saturation in the phase response with the evolution of the number of quasiparticles generated by a photon event. An alternative coordinate system that has a linear response raises the resolving power to 5.9 at 402 nm. We verify the measured resolving power with a two-line measurement using a laser source and a monochromator. We discuss several improvements that can be made to the devices on a route towards KID arrays with high resolving powers.

Typical materials for optical Microwave Kinetic Inductance Detetectors (MKIDs) are metals with a natural absorption of ∼ 30–50% in the visible and near-infrared. To reach high absorption efficiencies (90–100%) the KID must be embedded in an optical stack. We show an optical stack design for a 60 nm TiN film. The optical stack is modeled as sections of transmission lines, where the parameters for each section are related to the optical properties of each layer. We derive the complex permittivity of the TiN film from a spectral ellipsometry measurement. The designed optical stack is optimised for broadband absorption and consists of, from top (illumination side) to bottom: 85 nm SiO₂, 60 nm TiN, 23 nm of SiO₂, and a 100 nm thick Al mirror. We show the modeled absorption and reflection of this stack, which has >80% absorption from 400 to 1550 nm and near-unity absorption for 500–800 nm. We measure transmission and reflection of this stack with a commercial spectrophotometer. The results are in good agreement with the model.

Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits, and kinetic inductance parametric amplifiers. Compared with planar structures, multilayer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multilayer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measure the subkelvin and low-power microwave and millimeter-submillimeter-wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using superconducting chips with Nb-Ti-N/a-SiC:H/Nb-Ti-N microstrip resonators. We deposit the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a millimeter-submillimeter loss tangent ranging from 0.9×10-4 at 270 GHz to 1.5×10-4 at 385 GHz. The microwave loss tangent is 3.1×10-5. These are the lowest low-power subkelvin loss tangents that have been reported for microstrip resonators at millimeter-submillimeter and microwave frequencies. The a-SiC:H films are free of blisters and have low stress: -20 MPa compressive at 200-nm thickness to 60 MPa tensile at 1000-nm thickness.

We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and submillimeter wavelengths. The microstrips are fabricated from Nb-Ti-N, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasma-enhanced chemical vapor deposition (PECVD). Submillimeter wave losses are measured using on-chip Fabry-Perot resonators (FPRs) operating around 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan⁡δ=3.7±0.5×10-5 at approximately 6GHz and tan⁡δ=2.1±0.1×10-4 at 350 GHz. These results represent very low losses for deposited dielectrics, but the submillimeter wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.