Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C
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Bruno Buijtendorp (TU Delft - Tera-Hertz Sensing)
A Endo (TU Delft - Tera-Hertz Sensing)
Willem Jellema (TU Delft - ImPhys/Adam group, SRON–Netherlands Institute for Space Research)
K. Karatsu (SRON–Netherlands Institute for Space Research, TU Delft - Tera-Hertz Sensing)
K. Kouwenhoven (TU Delft - Tera-Hertz Sensing, SRON–Netherlands Institute for Space Research)
A. J. van der Linden (SRON–Netherlands Institute for Space Research)
H. M. Veen (TU Delft - Optical Technologies, TU Delft - Tera-Hertz Sensing)
Jochem J.A. Baselmans (University of Cologne, TU Delft - Tera-Hertz Sensing, SRON–Netherlands Institute for Space Research)
Sten Vollebregt (TU Delft - Electronic Components, Technology and Materials)
G.B. More authors (External organisation)
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Abstract
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.