Vibrational modes as the origin of dielectric loss at 0.27-100 THz in a - Si C
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B. T. Buijtendorp (TU Delft - Electrical Engineering, Mathematics and Computer Science)
A. Endo (TU Delft - Electrical Engineering, Mathematics and Computer Science)
W. Jellema (TU Delft - Applied Sciences, SRON–Netherlands Institute for Space Research)
K. Karatsu (TU Delft - Electrical Engineering, Mathematics and Computer Science, SRON–Netherlands Institute for Space Research)
K. Kouwenhoven (TU Delft - Electrical Engineering, Mathematics and Computer Science, SRON–Netherlands Institute for Space Research)
A. J. Van Der Linden (SRON–Netherlands Institute for Space Research)
H. M. Veen (TU Delft - Electrical Engineering, Mathematics and Computer Science, TU Delft - Mechanical Engineering)
J. J.A. Baselmans (SRON–Netherlands Institute for Space Research, Universität zu Köln, TU Delft - Electrical Engineering, Mathematics and Computer Science)
S. Vollebregt (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band (approximately 1-10 GHz) the dielectric loss at cryogenic temperatures and low electric field strengths is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band (approximately 0.1-1 THz) is not understood. We measured the loss of hydrogenated-amorphous-SiC films in the 0.27-100-THz range using superconducting-microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in hydrogenated amorphous SiC above 200 GHz.