Highly-conformal sputtered through-silicon vias with sharp superconducting transition

Journal Article (2021)
Author(s)

J.A. Alfaro Barrantes (TU Delft - EKL Processing)

Massimo Mastrangeli (TU Delft - Electronic Components, Technology and Materials)

D. J. Thoen (TU Delft - Tera-Hertz Sensing)

Sten Visser (SRON–Netherlands Institute for Space Research)

J. Bueno (TU Delft - Tera-Hertz Sensing, TU Delft - Electronics)

Jochem J. A. Baselmans (TU Delft - Tera-Hertz Sensing)

Lina Sarro (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
Copyright
© 2021 J.A. Alfaro Barrantes, Massimo Mastrangeli, David Thoen, Sten Visser, J. Bueno Lopez, J.J.A. Baselmans, Pasqualina M Sarro
DOI related publication
https://doi.org/10.1109/JMEMS.2021.3049822
More Info
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Publication Year
2021
Language
English
Copyright
© 2021 J.A. Alfaro Barrantes, Massimo Mastrangeli, David Thoen, Sten Visser, J. Bueno Lopez, J.J.A. Baselmans, Pasqualina M Sarro
Research Group
Electronic Components, Technology and Materials
Issue number
2
Volume number
30
Pages (from-to)
253-261
Reuse Rights

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Abstract

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to 500μ m-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354].

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