Highly-conformal sputtered through-silicon vias with sharp superconducting transition

Journal article (2021)

Authors

J.A. Alfaro Barrantes EKL Processing -

Massimo Mastrangeli Electronic Components, Technology and Materials -

David Thoen Tera-Hertz Sensing -

Sten Visser SRON Netherlands Institute for Space Research

J. Bueno Lopez Electronics - , Tera-Hertz Sensing -

J.J.A. Baselmans Tera-Hertz Sensing -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1109/JMEMS.2021.3049822

Superconducting Aluminum Silicon Interconnects Through-silicon vias Fabrication Cryogenic Sputtering Through-silicon vias Sputtering Temperature measurement Superconducting epitaxial layers Superconducting integrated circuits

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Published Date

2021

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to 500μ m-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354].

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