Drude's description of the response of low-temperature gallium arsenide to optical pulse excitation is used to evaluate the components of a time-domain Norton equivalent circuit of a photoconductive antenna (PCA) source. The saturation of the terahertz (THz) radiated power occurring at large optical excitation levels was previously associated by the scientific community to radiation and charge screening of the bias. With the present circuit, we are able to model accurately the measured saturation as only due to the EM feedback from the antenna to the bias. The predicted THz radiated power is shown to match very accurately the measurements when the circuit is combined with an accurate description of the experimental conditions and the modeling of the THz quasi-optical (QO) channel.@en

Semiconductor (SC)-based bulk absorbers operating in the (sub-) THz range are discussed. The conductivities of the bulk media are described by the Drude model for electron gas where the electron density is controlled. The Drude model predicts the existence of two frequencies of interest: one associated with the scattering time of the electrons and a second associated with the plasma frequency. The dimensions of the absorbers for a specific frequency range can be minimized by tuning the doping levels. Eventually, the maximum ohmic absorption from a bulk material is achieved when the real part of the characteristic impedance of the absorber is matched to the one of the surrounding medium and the imaginary part of the characteristic impedance is high so that the power entering the material is actually transformed in heat. Using a classic transmission line representation, a matching layer is introduced to further increase the absorption capabilities of an SC slab. Measurements using a time-domain spectroscopy (TDS) system show the increased accuracy of the Drude model @en

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV). For many years it was believed that the junction created by the chemical vapor deposition of amorphous boron on n-type crystalline silicon was a shallow p-n junction, although experimental results could not provide evidence for such a conclusion. Only recently, quantum-mechanics based modelling revealed the unique nature and the formation mechanism of this new junction. Here, we review the initiation and the history of understanding the a-B/c-Si interface (henceforth called the “boron-silicon junction”), as well as its importance for the microelectronics industry, followed by the scientific perception of the new junctions. Future developments and possible research directions are also discussed.@en

Photoconductive antennas (PCAs) are promising candidates for sensing and imaging systems. We have investigated their properties under pulsed laser illumination both in transmission and reception. First, a transmitting PCA has been characterized including a power measurement. Then, a Quasi-Optical (QO) link between a transmitter and a receiver was modelled and analyzed. In this work, we characterize this link with measurement. We use bow-tie based PCAs as examples, and measure the radiated power of the transmitter and the detected current of the receiver. The measurement shows very good agreement with the simulation.@en

For decades, mechanical resonators with high sensitivity have been realized using thin-film materials under high tensile loads. Although there are remarkable strides in achieving low-dissipation mechanical sensors by utilizing high tensile stress, the performance of even the best strategy is limited by the tensile fracture strength of the resonator materials. In this study, a wafer-scale amorphous thin film is uncovered, which has the highest ultimate tensile strength ever measured for a nanostructured amorphous material. This silicon carbide (SiC) material exhibits an ultimate tensile strength of over 10 GPa, reaching the regime reserved for strong crystalline materials and approaching levels experimentally shown in graphene nanoribbons. Amorphous SiC strings with high aspect ratios are fabricated, with mechanical modes exceeding quality factors 108 at room temperature, the highest value achieves among SiC resonators. These performances are demonstrated faithfully after characterizing the mechanical properties of the thin film using the resonance behaviors of free-standing resonators. This robust thin-film material has significant potential for applications in nanomechanical sensors, solar cells, biological applications, space exploration, and other areas requiring strength and stability in dynamic environments. The findings of this study open up new possibilities for the use of amorphous thin-film materials in high-performance applications.@en

A pulsed photoconductive terahertz (THz) source is presented that is able to radiate milliwatt (mW) level average power over a large bandwidth, by exploiting both the optical and electrical properties of photoconductive sources and the ultrawideband properties of connected antenna arrays. An optical system composed of a microlenses array splits the laser beam into N×N  spots that host the active excitation of the antenna arrays. An “ad hoc” network is introduced to bias the array active spots in order to implement a connected antenna array configuration. The array feeds a silicon lens to increase the directivity of the radiated THz beam. A dipole and a slot array are designed. Prototypes have been fabricated and measured. Power and spectrum measurements of the prototypes are in excellent agreement with the expected results. The proposed solutions achieve excellent power radiation levels by exploiting accurate electromagnetic design. Thus, they can offer enhancements to any active system relying on pulsed photoconductive antennas.@en

Superconducting circuit elements used in millimeter-submillimeter (mm-submm) astronomy would greatly benefit from deposited dielectrics with small dielectric loss and noise. This will enable the use of multilayer circuit elements and thereby increase the efficiency of mm-submm filters and allow for a miniaturization of microwave kinetic inductance detectors (MKIDs). Amorphous dielectrics introduce excess loss and noise compared with their crystalline counterparts, due to two-level system defects of unknown microscopic origin. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C, and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-Angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10-5 for a resonator energy of 105 photons, at 120 mK and 4 to 7 GHz. This makes these films promising for MKIDs and on-chip mm-submm filters.@en

State-of-the-art THz pulsed commercial systems operating over large bandwidth suffer from high dispersion or low radiation efficiency due to the poor coupling between the transmitter and receiver photoconductive antennas (PCAs). In this work, we present the fabrication and characterization of a leaky-lens PCA that has the potential to solve this problem. The presented PCA is based on a low-temperature grown gallium arsenide (LT-GaAs) membrane with a 1:15 bandwidth coverage (0.1-1.5 THz), where the frequency response is constant. In order to fabricate the PCA on an LT-GaAs membrane, a novel fabrication process is developed. This process is dramatically faster than previously used processes (∼1.5 h instead of ∼20 h). Furthermore, an experimental validation of the radiated power together with the comparison to a standard bow-tie-based PCA fabricated on the same LT-GaAs wafer is shown in this article. We show that the PCA source on the LT-GaAs membrane is more efficient due to the enhanced leaky wave radiation. The leaky-lens PCA stands out as a great candidate to improve the coupling efficiency in THz pulsed commercial systems, where the maximum laser power that can be used is limited by the dispersion in the optic fiber.@en

Volumetric absorptive microsampling (VAMS) and dried urine spot (DUS) strategies were applied for the collection of dried microsamples for anti-doping testing of low-stability peptide hormones and growth factors prohibited by the World Anti-Doping Agency (WADA). Drying, storage and transport conditions, as well as pretreatment steps, were optimised before liquid chromatography - tandem mass spectrometry (LC–MS/MS) analysis. The analytical method has been fully validated in terms of sensitivity (limits of quantitation 0.3−10 ng/mL), precision (RSD% < 6.6 %) and extraction yields (78–91 %). Dried microsample stability studies (90 days) have been performed and compared to fluid urine stability. Significantly higher losses have been observed in fluid urine stored at −20 °C (up to 55 %) and −80 °C (up to 29 %) than in dried urine microsamples stored at room temperature (< 19 %). The final microsampling and analysis protocols allow the collection of urine microvolumes, unlikely to be tampered, stably storable and shippable with no particular precautions for possible anti-doping testing of prohibited peptides and hormones.@en

A clear understanding of the spectral components of an irradiated beam, or captured optical emission, is essential to optimize an optical system and increase its performance. Logically, for this purpose a grating-based spectrometer could be the first choice. However, in the case of a wide range spectrum, and for radiation with one dominant wavelength, this option may not work well. In this paper, we present a technique based on an array of bandpass detectors to measure accurately the power of a number of beam-specific spectral components in a wide spectrum range: from soft X-ray to infrared. The main unique features of this technique are: customization for specific wavelengths of interest; vacuum compatibility; and high sensitivity to low-energy spectral components in the presence of one or more dominant highpower spectral components.@en

Printing of electronics has been gaining a lot of attention over the past decade as a low cost alternative to conventional electronic fabrication methods. A significant development in this area was the possibility to print a silicon precursor, polydihydrosilane, which can directly be transformed into polycrystalline silicon by an excimer laser treatment. Due to the limited laser heat diffusion, low-cost flexible substrates such as plastics and even paper could be used that typically have low thermal budgets. Since the silicon precursor is sensitive to ultraviolet light and may transform in a photochemical reaction, the question arises whether the excimer laser crystallization is predominantly photochemical or rather a thermal reaction. In this work, a model is developed and reflected to experimental data, to understand the physics behind the process. Through finite-element analysis and experimental characterizations it was observed that the physics behind the process was predominantly thermal, and that instead of an intermediate transition to a-Si, a direct transformation to poly-Si exists. By understanding this process, the treatment can be optimized or more efficient tools can be used that would enable a low cost production of high performing silicon devices@en

Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude lower price than low-cost polymer alternatives, and is biodegradable. As ink materials, organic and metal-oxide semiconductors are thoroughly being investigated; however, they lack in electric performance compared to silicon in terms of device mobility, reliability, and energy efficiency. In recent years, liquid precursors for silicon were found and used to create polycrystalline silicon (poly-Si). However, fabrication of transistors on top of low-cost flexible substrates such as paper has remained an outstanding challenge. Here we demonstrate both p-channel and n-channel poly-Si thin-film transistors (TFTs) fabricated directly on top of paper with field-effect mobilities of 6.2 and 2.0 cm2/V s, respectively. Many fabrication challenges have been overcome by limiting the maximum process temperature to approximately 100 °C, and avoiding liquid chemicals commonly used for etching and cleaning. Patterning of poly-Si has been achieved by additive selective crystallization of the precursor film using an excimer laser. This work serves as a proof of concept, and has the potential to further improve device performance. Owing to the low-cost, biodegradable nature of paper, and the high performance, reliability, and energy efficiency of poly-Si TFTs, this work opens a pathway toward truly low-cost, low-power, recyclable applications including smart packages, biodegradable health monitoring units, flexible displays, and disposable sensor nodes.@en

Silicon carbide (SiC) ceramic membranes are of particular significance for wastewater treatment due to their mechanical strength, chemical stability, and antifouling ability. Currently, the membranes are prepared by SiC-particle sintering at a high temperature. The production suffers from long production time and high costs. In this paper, we demonstrated a more economical way to produce SiC ultrafiltration membranes based on low-pressure chemical vapor deposition (LPCVD). SiC was deposited in the pores of alumina microfiltration supports using two precursors (SiH2Cl2 and C2H2/H2) at a relatively low temperature of 750 °C. Different deposition times varying from 0 to 150 min were used to tune membrane pore size. The pure water permeance of the membranes only decreased from 350 Lm−2h−1bar−1 to 157 Lm−2h−1bar−1 when the deposition time was increased from 0 to 120 min due to the narrowing of membrane pore size from 71 to 47 nm. Increasing the deposition time from 120 to 150 min mainly resulted in the formation of a thin, dense layer on top of the support instead of in the pores. Oil-in-water emulsion filtration experiments illustrated that both the reversible and irreversible fouling of the SiC-deposited UF membrane was considerably lower as compared to the pristine alumina support. The unique feature that pore sizes decrease linearly as a function of SiC deposition time creates opportunities to produce low-fouling SiC membranes with tuned pore sizes on relatively cheap support.@en

Metal-Semiconductor (M/S) heterojunctions, better known as Schottky junctions play a crucial role in modern electronics. At present, the mechanisms behind the M/S junctions are still a subject of discussion. In this work, we investigate the interfaces between semiconducting crystalline Si and amorphous metallic indium, Si{0 0 1}/a-In and Si{1 1 1}/a-In using both ab initio molecular dynamics simulations and a Schottky-Mott approach. The simulations reveal the formation of a distinct border between the Si substrates and amorphous In at the interfaces. The In atoms adjacent to the interfaces exhibit atomic ordering. Charge transfer occurs from In to Si, forming c-Si−q/a-In+q charge barriers at the interfaces. This indicates that a crystalline p-Si/a-In heterojunction will have rectifying properties, which agrees with an analysis using the Schottky-Mott model which predicts a Schottky barrier height of 1.3 eV for crystalline p-Si/a-In using the calculated work function for a-In (3.82 eV). We further discuss the interfacial charge transfer, related hole-depletion regions in Si adjacent to the interfaces and the Schottky-Mott approximations.@en

The time evolution of voltages and currents in a pulsed photo conductive antenna (PCA) source is evaluated resorting to a rigorous procedure that stems from semiconductor physics first, to define the phenomena involved in the generation of the photocurrent, and then relies on an equivalent circuit in time domain, providing a direct estimation of the power generated by the PCA as well as its spectral distribution. The circuit model is validated via a campaign of measurements of standard PC antenna sources. The saturation phenomena in the THz radiated power occurring at large optical excitation levels, previously observed by the scientific community and associated to different phenomena, are accurately predicted by the present method, which ascribe their main cause to the feedback from the antenna: indeed, the electromagnetic field generated by the device tend to reduce the strength of the forcing field used to accelerate the photo-carriers.@en

Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm2/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.@en

A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter. The low electrical resistivity achieved without sintering, its reproducibility and straightforward processing steps, and the short time required to fill large arrays of vias at wafer scale - all make this method one of the simplest and quickest options for filling HAR TSVs for MEMS 3D integration. Moreover, the low melting point (∼ 150 °C), malleability and superconductivity at 3.41 K make indium an interesting option in 3D interconnects for connecting quantum devices operating below 4 K.@en

Clenbuterol is a chiral, selective β2-adrenergic agonist. It is administered as a racemic mixture for therapeutic purposes (as a bronchodilator or prospective neuroprotective agent), but also for non-therapeutic uses (athletic performance enhancement, cattle growth promotion). Aim of the present study is to develop an original, enantioselective workflow for the analysis of clenbuterol enantiomers in urine microsamples. An innovative miniaturised sampling procedure by volumetric absorptive microsampling (VAMS) and a microsample pretreatment strategy based on stop-and-go extraction (StAGE) tips were developed and coupled to an original, chiral analytical method, exploiting liquid chromatography with triple quadrupole detection (LC-MS/MS). The method was validated, with satisfactory results: good linearity (r2 ≥ 0.9995) and LOQ values (0.3 ng/mL) were found over suitable concentration ranges. Extraction yield (>87 %), precision (RSD < 4.3 %) and matrix effect (85–90 %) were all within acceptable levels of confidence. After validation, the method was applied to the determination of clenbuterol in dried urine sampled by VAMS from patients taking the drug for therapeutic reasons. Analyte content ranged from 0.8 to 2.5 ng/mL per single enantiomer, with substantial retention of the original drug racemic composition. The VAMS-StAGE-LC-MS/MS workflow seems to be suitable for future application to anti-doping testing of clenbuterol in urine.@en