Time-Domain Reflection THz Spectroscopy of Heated c-Si for Radiometric Applications

Abstract

THz time-domain reflection spectroscopy experiments of crystalline Si samples of different doping and heated to temperatures up to 475 K have been performed to measure their electric permittivity, absorptivity and resistivity dispersion spectra. Free charge carrier volume concentration and scattering time have also been extracted from the measurements, as a function of temperature, to best fit the Drude model to the complex resistivity spectra. The dependence of these microscopic parameters to the temperature resembles the curves from the unified model for the carriers mobility, based on past dc measurements. The high-frequency data acquired with these measurements constitute the fundamental information and parameters, necessary for the characterization of crystalline Si thermal radiation emission.