Reflection TDS-THz Characterization and Drude Modelling of N-Type Doped C-Si from Room Temperature to 475 K

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Reflection TDS-THz Characterization and Drude Modelling of N-Type Doped C-Si from Room Temperature to 475 K

Conference Paper (2025)

Author(s)

L.F.E. Beijnen (TU Delft - Tera-Hertz Sensing)

M.D. Huiskes (TU Delft - Tera-Hertz Sensing)

A. Neto (TU Delft - Tera-Hertz Sensing)

P.M. Sberna (TU Delft - Tera-Hertz Sensing)

Research Group

Tera-Hertz Sensing

DOI related publication

https://doi.org/10.23919/EuMC65286.2025.11235165

Silicon Time-domain THz Drude

To reference this document use:

https://resolver.tudelft.nl/uuid:43c24e7b-fd7a-4a34-b672-e2718f8d595e

More Info

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Publication Year

2025

Language

English

Research Group

Tera-Hertz Sensing

Bibliographical Note

Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en

Pages (from-to)

286-289

ISBN (print)

979-8-3315-1260-6

ISBN (electronic)

978-2-87487-081-1

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

The mm and sub-mm wave propagation and absorption in n-type c-Si are investigated as a function of temperature by time-domain reflectivity measurements. The temperature range spans from 300 K to 475 K and the complex electric resistivity, extracted from the reflectivity spectra, shows the same free electrons mobility degradation with temperature as observed with previous dc conductivity measurements. The Drude theory of free charge carriers, based on the conduction electron concentration and effective scattering time, well fit the experimental data from 200 GHz to 1 THz. The dependence of the scattering time with respect to the doping concentration and sample temperature is consistent with the empirical unified model for the electron dc mobility, which is widely used in c-Si passive components and device simulations.

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