Sub-Mm Wave Thermal Radiation from Silicon Wafers

Conference Paper (2025)
Author(s)

L.F.E. Beijnen (TU Delft - Tera-Hertz Sensing)

J. Bueno Lopez (TU Delft - Electronics)

(TU Delft - Electronics)

A. Neto (TU Delft - Tera-Hertz Sensing)

Research Group
Tera-Hertz Sensing
DOI related publication
https://doi.org/10.23919/EuMC65286.2025.11235188
More Info
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Publication Year
2025
Language
English
Research Group
Tera-Hertz Sensing
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
Pages (from-to)
711-714
ISBN (print)
979-8-3315-1260-6
ISBN (electronic)
978-2-87487-081-1
Reuse Rights

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Abstract

The thermal energy radiated by silicon wafers with different conductivities is characterized experimentally in the m m and sub-mm wave ranges. These samples are heated up, and the energy that they radiate thermally is captured by different horn antennas covering the frequency band between 75 and 500 GHz. The measured thermal radiated power agrees with the prediction from Planck's law for the highly doped wafers, corresponding to high conductivities. However, for low conductivities, the measurements show a descending pattern as a function of the frequency, which is not in line with expectations from Planck's law. A recently developed theoretical model provides a classical explanation of these results [1].

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