The spectroscopic properties of crystalline silicon wafers are investigated experimentally as a function of the temperature. To this goal, samples of phosphorus-doped silicon are characterized using Terahertz Time-Domain Spectroscopy (THz-TDS) in reflection. Four different samples span resistivities from ∼0.04 − 50Ω cm, for temperatures ranging from room temperature to 200 C. The measurements confirm that the widely used Drude's theory is adequate also to model the dispersion of silicon at higher temperatures. When comparing the corresponding scattering times obtained here using THz TDS pulses with the scattering time derived from the well accepted DC based empirical model of the mobility, differences emerge depending on the doping level. The scattering times predicted and measured are on the same order of magnitude and the anticipated reduction of the scattering time with increasing temperature has also been confirmed by the high frequency measurements. The absorptivity of the samples is also estimated accurately as a function of the frequency up to 1 THz.

The thermal energy radiated by silicon wafers with different conductivities is characterized experimentally in the mm and sub-mm wave ranges. These samples are heated up, and the energy that they radiate thermally is captured by different horn antennas covering the frequency band between 75 and 500 GHz. The energy radiated (in the order of pW) and collected by the horn antennas is subsequently detected by zero bias Schottky diodes. The measured thermal radiated power agrees with the prediction from Planck's law for the highly doped wafers, corresponding to high conductivities. However, for low conductivities, the measurements show a descending pattern as a function of the frequency, which is not in line with expectations from Planck's law. Parallelly, we have developed a theoretical model providing a classical explanation of these results [1].

This contribution presents the assessment of RDL technology at sub-terahertz frequencies based on polybenzoxazole (PBO) polymers. A stack of two PBO layers of 10μm thickness with 3 metallization of 5μm copper is being under development. Vias as small as 10μm and a separation of 60μm are being explored. To assess the materials and capabilities of this technology, GCPW, stripline transmission line structures are being assessed, expecting losses in the order of 1.3dB/mm and 2.1dB/mm respectively. Moreover, two resonators have been designed to enhance the accuracy of the characterization.

We introduce Microgel-based Etalon Membranes (MEMs), based on the combination of stimuli-responsive microgels with an etalon, which is an optical device consisting of two reflecting plates and is used to filter specific wavelengths of light. The microgels are sandwiched between two reflective layers and, in response to a stimulus (e.g., temperature, pH, or biomarker concentration), swell or de-swell, thereby changing the distance between the two reflective layers and generating multiple peaks in the reflectance spectra. This property gives a MEM the unique capability of simultaneous separation and tunable responses to environmental changes and/or biomarker concentrations. We propose a design based on gold layers on a silicon nitride wafer membrane. Our comprehensive characterization, employing permeability experiments, in situ optical reflectance spectroscopy, in-liquid atomic force microscopy (AFM) analysis, and captive bubble contact angle measurements, elucidates the dynamic response of MEM to pH, temperature, and glucose stimuli and the corresponding effect of microgel swelling/de-swelling on the membrane properties, e.g., permeability. The AFM results confirm the dynamic changes of the microgel layer’s thickness on the membrane surface in response to the stimuli. Although the microgel’s swelling/de-swelling influences the effective pore radius, the decrease in the membrane’s permeance is limited to less than 10%. In the swollen state of the microgels, the etalon membranes show a prominent hydrophilic behavior, while they become less hydrophilic in the microgels’ de-swollen state. This work introduces MEM and provides novel insights into their behavior. The fundamental understanding that we reveal opens the way to applications ranging from point-of-care testing to continuous environmental monitoring.

Photo-conductive antennas (PCAs) are the workhorse of time-domain THz sensing and imaging. In this work, we employ a rigorous Norton equivalent circuit model to identify and estimate the substrate-related parasitic effects, that might limit the THz emission, to better design future PCAs.

State-of-the-art THz pulsed commercial systems operating over large bandwidth suffer from high dispersion or low radiation efficiency due to the poor coupling between the transmitter and receiver photoconductive antennas (PCAs). In this work, we present the fabrication and characterization of a leaky-lens PCA that has the potential to solve this problem. The presented PCA is based on a low-temperature grown gallium arsenide (LT-GaAs) membrane with a 1:15 bandwidth coverage (0.1-1.5 THz), where the frequency response is constant. In order to fabricate the PCA on an LT-GaAs membrane, a novel fabrication process is developed. This process is dramatically faster than previously used processes (∼1.5 h instead of ∼20 h). Furthermore, an experimental validation of the radiated power together with the comparison to a standard bow-tie-based PCA fabricated on the same LT-GaAs wafer is shown in this article. We show that the PCA source on the LT-GaAs membrane is more efficient due to the enhanced leaky wave radiation. The leaky-lens PCA stands out as a great candidate to improve the coupling efficiency in THz pulsed commercial systems, where the maximum laser power that can be used is limited by the dispersion in the optic fiber.

For decades, mechanical resonators with high sensitivity have been realized using thin-film materials under high tensile loads. Although there are remarkable strides in achieving low-dissipation mechanical sensors by utilizing high tensile stress, the performance of even the best strategy is limited by the tensile fracture strength of the resonator materials. In this study, a wafer-scale amorphous thin film is uncovered, which has the highest ultimate tensile strength ever measured for a nanostructured amorphous material. This silicon carbide (SiC) material exhibits an ultimate tensile strength of over 10 GPa, reaching the regime reserved for strong crystalline materials and approaching levels experimentally shown in graphene nanoribbons. Amorphous SiC strings with high aspect ratios are fabricated, with mechanical modes exceeding quality factors 10⁸ at room temperature, the highest value achieves among SiC resonators. These performances are demonstrated faithfully after characterizing the mechanical properties of the thin film using the resonance behaviors of free-standing resonators. This robust thin-film material has significant potential for applications in nanomechanical sensors, solar cells, biological applications, space exploration, and other areas requiring strength and stability in dynamic environments. The findings of this study open up new possibilities for the use of amorphous thin-film materials in high-performance applications.

Drude's description of the response of low-temperature gallium arsenide to optical pulse excitation is used to evaluate the components of a time-domain Norton equivalent circuit of a photoconductive antenna (PCA) source. The saturation of the terahertz (THz) radiated power occurring at large optical excitation levels was previously associated by the scientific community to radiation and charge screening of the bias. With the present circuit, we are able to model accurately the measured saturation as only due to the EM feedback from the antenna to the bias. The predicted THz radiated power is shown to match very accurately the measurements when the circuit is combined with an accurate description of the experimental conditions and the modeling of the THz quasi-optical (QO) channel.

Most of the studies on narrow-band near-infrared detection reported so far are related to the 1.3μm and 1.55μm spectral windows. There is insufficient research work done on radiation detection in the narrow band around 1 μm wavelength, which is just outside the Si (0.95μ m) and GaAs (0.85μ m) effective cut-off spectral sensitivity. This paper presents a p+n Ge-on-Si detector with a customized large active window, employing the PureGaB technology, to detect radiation in a very narrow band around 1μ m. The advantages of the proposed detector are: (1) CMOS-compatibility and micro-spectroscopic capability; (2) low dark current and high photoresponsivity, compared to similar devices reported in the literature; (3) enhanced sensitivity to weak radiation by realizing an ultra-shallow and very thin depletion region. These detectors can be good candidates for measuring the YAG laser radiation and measuring stray radiation in photolithography.

Superconducting circuit elements used in millimeter-submillimeter (mm-submm) astronomy would greatly benefit from deposited dielectrics with small dielectric loss and noise. This will enable the use of multilayer circuit elements and thereby increase the efficiency of mm-submm filters and allow for a miniaturization of microwave kinetic inductance detectors (MKIDs). Amorphous dielectrics introduce excess loss and noise compared with their crystalline counterparts, due to two-level system defects of unknown microscopic origin. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C, and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-Angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10-5 for a resonator energy of 105 photons, at 120 mK and 4 to 7 GHz. This makes these films promising for MKIDs and on-chip mm-submm filters.