Superconducting High-Aspect Ratio Through-Silicon Vias with DC-Sputtered Al for Quantum 3D integration
J.A. Alfaro Barrantes (TU Delft - EKL Processing)
Massimo Mastrangeli (TU Delft - Electronic Components, Technology and Materials)
D. J. Thoen (TU Delft - Tera-Hertz Sensing)
Sven Visser (SRON–Netherlands Institute for Space Research)
J. Bueno (TU Delft - Tera-Hertz Sensing)
J. Baselmans (TU Delft - Tera-Hertz Sensing)
P. M. Sarro (TU Delft - Electronic Components, Technology and Materials)
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Abstract
This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 mΩ at room temperature and superconductivity below 1.28 K were measured by a crossbridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.