Superconducting High-Aspect Ratio Through-Silicon Vias with DC-Sputtered Al for Quantum 3D integration

Journal article (2020)

Authors

J.A. Alfaro Barrantes EKL Processing -

Massimo Mastrangeli Electronic Components, Technology and Materials -

David Thoen Tera-Hertz Sensing -

Sven Visser SRON Netherlands Institute for Space Research

J. Bueno Lopez Tera-Hertz Sensing -

J.J.A. Baselmans Tera-Hertz Sensing -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI: https://doi.org/10.1109/LED.2020.2994862

Superconducting Aluminum Interconnects Cryogenic Through-silicon vias Sputtering

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http://resolver.tudelft.nl/uuid:a48ad4d3-20a1-4ff0-93cf-f56778be51f7

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Published Date

2020-7

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of 300 μm-deep and 50 μmwide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias. Single-via electric resistance as low as 80.44 mΩ at room temperature and superconductivity below 1.28 K were measured by a crossbridge Kelvin resistor structure. This work thus demonstrates the fabrication of functional superconducting interposer layers, suitable for high-density 3D integration of silicon-based quantum computing architectures.

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